GT25Q301 Toshiba Semiconductor, GT25Q301 Datasheet - Page 4

• Manufacturer Part Number: GT25Q301
• Description: N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
• Manufacturer: Toshiba Semiconductor

0.05
0.05
0.5
0.3
0.1
0.5
0.3
0.1
0.5
30
10
3
1
3
1
5
3
1
3
3
3
Common emitter
V CC = 600 V
V GG = ±15 V
I C = 25 A
Common emitter
V CC = 600 V
V GG = ±15 V
I C = 25 A
Common emitter
V CC = 600 V
V GG = ±15 V
I C = 25 A
5
5
5
: Tc = 25°C
: Tc = 125°C
: Tc = 25°C
: Tc = 125°C
Switching Loss E
: Tc = 25°C
: Tc = 125°C
Switching Time t
Switching Time t
10
Gate resistance R
10
10
Gate resistance R
Gate resistance R
30
30
30
50
50
50
on
on
off
G
, E
G
G
, t
, t
100
100
100
(Ω)
r
f
off
(Ω)
(Ω)
– R
– R
– R
G
G
G
E on
t on
E off
t off
300
300
300
t r
t f
500
500
500
4
0.03
0.01
0.03
0.01
0.3
0.1
0.3
0.1
0.3
0.1
10
1
1
3
1
0
0
0
5
5
5
Switching Loss E
Switching Time t
Switching Time t
Collector current I
Collector current I
Collector current I
10
10
10
15
15
15
on
on
off
C
C
C
, E
Common emitter
V CC = 600 V
V GG = ±15 V
R G = 43 Ω
Common emitter
V CC = 600 V
V GG = ±15 V
R G =43 Ω
Common emitter
V CC = 600 V
V GG = ±15 V
R G = 43 Ω
20
20
20
, t
, t
r
f
off
(A)
(A)
(A)
– I
– I
E off
: Tc = 25°C
: Tc = 125°C
: Tc = 25°C
: Tc = 125°C
– I
: Tc = 25°C
: Tc = 125°C
C
C
C
25
25
25
GT25Q301
t off
2003-01-28
t on
E on
t r
t f
30
30
30