GP200MHS18 Dynex Semiconductor, GP200MHS18 Datasheet
GP200MHS18
Related parts for GP200MHS18
GP200MHS18 Summary of contents
Page 1
... The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP200MHS18 is a half bridge 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications ...
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... GP200MHS18 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...
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... 10mA 15V 200A 15V 200A 125˚ case 1ms 200A 200A 125˚C F case V = 25V 0V 1MHz GP200MHS18 Min. Typ. Max. Units - - 4.5 5 200 400 A - 2.2 2.5 ...
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... GP200MHS18 ELECTRICAL CHARACTERISTICS T = 25˚C unless stated otherwise case Symbol Parameter t Turn-off delay time d(off) t Fall time f E Turn-off energy loss OFF t Turn-on delay time d(on) t Rise time r E Turn-on energy loss ON Q Diode reverse recovery charge 125˚C unless stated otherwise ...
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... 10Ω 4.7Ω 250 200 A 150 B 100 150 200 0 - (A) C Fig. 6 Typical turn-on energy vs collector current GP200MHS18 V = 20/15/12V ge = 125˚C 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Collector-emitter voltage (V) ce Fig. 4 Typical output characteristics = 125˚C = ±15V = 900V 100 150 ...
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... GP200MHS18 100 T = 25˚C case V = ±15V 900V 100 Collector current, I Fig. 7 Typical turn-off energy vs collector current 15V 900V 125˚C case 100 Collector current, I Fig. 9 Typical diode turn-off energy vs collector current 6/10 Caution: This device is sensitive to electrostatic discharge ...
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... F Fig. 12 Reverse bias safe operating area 1000 100 50 s 100 1ms 10000 1000 - (V) ce GP200MHS18 = 125˚C = 15V = 5 : Minimum recommended value 1200 400 800 1600 Collector-emitter voltage (V) ce Transistor 10 100 1000 Pulse width (ms) p Fig. 11 Transient thermal impedance ...
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... GP200MHS18 500 450 PWM Sine Wave. Power Factor = 0.9, 400 Modulation Index = 1 350 300 250 200 150 100 Conditions 125 900V (kHz) max Fig Phase inverter operating frequency 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. ...
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... M6 106 0.8 108 0.8 Nominal weight: 270g Recommeded fixings for mounting: M6 Recommended mounting torque: 5Nm (44lbs.ins) Module outline type code: M GP200MHS18 Fast on tabs Application Note Number AN4502 AN4503 AN4504 AN4505 AN4506 AN4507 AN4508 AN4869 AN5000 AN5167 ...
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... GP200MHS18 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. ...