GP200MHS18 Dynex Semiconductor, GP200MHS18 Datasheet - Page 6

• Manufacturer Part Number: GP200MHS18
• Description: Half Bridge IGBT Module
• Manufacturer: Dynex Semiconductor

GP200MHS18
6/10
100
20
15
10
30
25
90
80
70
60
50
40
30
20
10
Fig. 9 Typical diode turn-off energy vs collector current
5
0
0
0
0
Fig. 7 Typical turn-off energy vs collector current
T
V
V
V
V
case
GE
CE
GE
CE
25
= ±15V
= 900V
= 900V
= 15V
= 25˚C
50
50
Collector current, I
Collector current, I
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
75
100
100
T
case
= 125˚C
125
C
T
- (A)
T
case
- (A)
150
150
= 25˚C
A: R
B: R
C: R
g
g
g
175
= 15Ω
= 10Ω
= 4.7Ω
A
B
C
200
200
Fig. 10 Typical switching characteristics vs collector current
2400
2200
2000
1800
1600
1400
1200
1000
240
220
200
180
160
140
120
100
800
600
400
200
80
60
40
20
0
0
0
Fig. 8 Typical turn-off energy vs collector current
0
T
V
V
case
GE
CE
t
t
d(off)
d(on)
20
= 900V
t
= ±15V
r
Typical switching times vs collector current
= 125˚C
t
f
40
50
Collector current, I
Collector current, I
60
80
100
100
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120 140
C
C
- (A)
- (A)
150
T
V
V
R
A: R
B: R
C: R
case
GE
CE
g
160 180
= 4.7Ω
= ±15V
= 900V
g
g
g
= 125˚C
= 15Ω
= 10Ω
= 4.7Ω
A
B
C
200
200