GP200MHS18 Dynex Semiconductor, GP200MHS18 Datasheet - Page 7

• Manufacturer Part Number: GP200MHS18
• Description: Half Bridge IGBT Module
• Manufacturer: Dynex Semiconductor

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1000
100
0.1
400
350
300
250
200
150
100
10
1
50
0
1
0
Fig. 11 Diode typical forward characteristics
I
Fig. 13 Forward bias safe operating area
C
max. (single pulse)
0.5
Collector-emitter voltage, V
10
1.0
Foward voltage, V
1.5
100
2.0
T
j
= 25˚C
F
- (V)
ce
- (V)
2.5
1000
T
j
= 125˚C
t
p
3.0
100 s
50 s
= 1ms
10000
3.5
1000
100
450
400
300
250
200
150
100
10
500
350
50
1
0
1
0
R
T
V
R
Fig. 12 Reverse bias safe operating area
case
ge
g(min)
g(min)
Fig. 11 Transient thermal impedance
= 15V
= 125˚C
: Minimum recommended value
= 5
400
10
Collector-emitter voltage, V
Pulse width, t
800
100
p
- (ms)
1200
GP200MHS18
ce
1000
- (V)
1600
Transistor
Diode
10000
2000
7/10