GP200MHS18 Dynex Semiconductor, GP200MHS18 Datasheet - Page 5

• Manufacturer Part Number: GP200MHS18
• Description: Half Bridge IGBT Module
• Manufacturer: Dynex Semiconductor

TYPICAL CHARACTERISTICS
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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250
200
150
100
250
200
400
350
300
150
50
100
Fig. 5 Typical turn-on energy vs collector current
50
0
0
0
0
T
V
V
Common emitter
T
case
GE
CE
case
Fig. 3 Typical output characteristics
= 900V
= ±15V
= 25˚C
1.0
= 25˚C
50
Collector-emitter voltage, V
2.0
Collector current, I
3.0
100
4.0
C
- (A)
ce
V
5.0
150
ge
- (V)
A: R
B: R
C: R
= 20/15/12V
g
g
g
V
6.0
= 15Ω
= 10Ω
= 4.7Ω
ge
= 10V
A
B
C
200
7.0
300
250
200
150
100
250
200
400
350
300
150
100
50
Fig. 6 Typical turn-on energy vs collector current
50
0
0
0
0
T
V
V
Common emitter
T
case
GE
CE
case
1.0
Fig. 4 Typical output characteristics
= ±15V
= 900V
= 125˚C
= 125˚C
2.0
50
Collector-emitter voltage, V
3.0
Collector current, I
4.0
100
5.0
V
6.0
C
ge
- (A)
GP200MHS18
= 20/15/12V
ce
7.0
150
- (V)
A: R
B: R
C: R
8.0
V
g
g
g
= 15Ω
= 10Ω
ge
= 4.7Ω
9.0 10.0
= 10V
A
B
C
200
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