GP200MHS18 Dynex Semiconductor, GP200MHS18 Datasheet - Page 4

• Manufacturer Part Number: GP200MHS18
• Description: Half Bridge IGBT Module
• Manufacturer: Dynex Semiconductor

GP200MHS18
ELECTRICAL CHARACTERISTICS
T
T
case
case
4/10
Symbol
Symbol
= 25˚C unless stated otherwise
= 125˚C unless stated otherwise
E
E
t
t
t
t
E
E
Q
d(off)
d(on)
Q
d(off)
d(on)
OFF
t
OFF
t
t
t
ON
ON
r
f
r
f
rr
rr
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Parameter
Parameter
I
I
F
F
R
R
= 200A, V
= 200A, V
G(ON)
G(ON)
dI
Test Conditions
dI
Test Conditions
F
F
/dt = 2000A/ s
/dt = 2400A/ s
V
V
V
V
L ~ 100nH
L ~ 100nH
= R
= R
I
GE
CE
I
GE
CE
C
C
= 200A
= 200A
= 900V
= 900V
= 15V
= 15V
G(OFF)
G(OFF)
R
R
= 50% V
= 50% V
= 4.7
= 4.7
CES
CES
,
,
Min.
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
www.dynexsemi.com
Typ.
Typ.
600
300
100
540
100
100
500
200
450
80
50
90
60
50
Max.
Max.
800
400
150
700
130
120
110
650
300
120
600
120
80
80
Units
Units
mJ
mJ
mJ
mJ
ns
ns
ns
ns
ns
ns
ns
ns
C
C