GP200MHS18 Dynex Semiconductor, GP200MHS18 Datasheet - Page 8

• Manufacturer Part Number: GP200MHS18
• Description: Half Bridge IGBT Module
• Manufacturer: Dynex Semiconductor

GP200MHS18
8/10
200
150
100
500
450
400
350
300
250
50
0
1
Fig. 12 3 Phase inverter operating frequency
Conditions:
T
R
j
g
= 125 C, T
= 5 , V
CC
c
= 900V
= 75 C,
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
f
max
PWM Sine Wave.
Power Factor = 0.9,
Modulation Index = 1
- (kHz)
10
50
300
250
200
150
100
50
0
0
Fig. 13 DC current rating vs case temperature
20
40
Case temperature, T
60
80
www.dynexsemi.com
100
case
- (˚C)
120
140
160