IRF9530N International Rectifier, IRF9530N Datasheet - Page 2

• Manufacturer Part Number: IRF9530N
• Description: Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A)
• Manufacturer: International Rectifier

IRF9530N
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
I
I
V
R
V
g
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
SM
on
S
rr
V
fs
D
S
(BR)DSS
GS(th)
SD
DS(on)
g
gs
gd
iss
oss
rss
rr
Repetitive rating; pulse width limited by
Starting T
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
G
= 25 , I
/ T
J
J
= 25°C, L = 7.0mH
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
AS
= -8.4A. (See Figure 12)
Parameter
Parameter
J
= 25°C (unless otherwise specified)
I
Pulse width
-100
T
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-2.0
–––
–––
–––
–––
–––
–––
–––
SD
Min. Typ. Max. Units
Min. Typ. Max. Units
3.2
–––
–––
–––
–––
–––
–––
J
Intrinsic turn-on time is negligible (turn-on is dominated by L
175°C
-8.4A, di/dt
-0.11 –––
–––
170
–––
––– 0.20
–––
–––
––– -250
–––
––– -100
–––
–––
–––
760
260
–––
–––
650
–––
130
4.5
15
58
45
46
7.5
–––
–––
-4.0
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
-1.6
970
-25
190
300µs; duty cycle
8.3
58
32
-14
-56
-490A/µs, V
V/°C
µA
nH
nA
nC
ns
pF
nC
ns
V
V
S
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = -100A/µs
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= -8.4A
= -8.4A
= 25°C, I
= 25°C, I
DD
= 6.2
= 9.1
= 0V, I
= -10V, I
= V
= -50V, I
= -100V, V
= -80V, V
= 20V
= -20V
= -80V
= -10V, See Fig. 6 and 13
= 0V
= -25V
= -50V
2%.
V
GS
(BR)DSS
, I
D
See Fig. 10
S
F
D
Conditions
= -250µA
D
D
Conditions
= -8.4A, V
= -8.4A
GS
= -250µA
= -8.4A
= -8.4A
GS
,
= 0V, T
= 0V
D
= -1mA
GS
G
J
= 150°C
= 0V
G
S
+L
D
S
D
)
S
D