2SK1151 Hitachi Semiconductor, 2SK1151 Datasheet - Page 5
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2SK1151
Manufacturer Part Number
2SK1151
Description
Silicon N-Channel MOS FET
Manufacturer
Hitachi Semiconductor
Datasheet
1.2SK1151.pdf
(9 pages)
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20
16
12
8
4
0
10
8
6
4
2
0
–40
Drain to Source Saturation Voltage
Gate to Source Voltage V
vs. Gate to Source Voltage
V
Pulse Test
4
Static Drain to Source on State
GS
Resistance vs. Temperature
Case Temperature T
0
= 10 V
8
I
D
40
= 2 A
I
2 A
1 A
D
12
= 0.5 A
Pulse Test
80
GS
16
C
0.5 A
(V)
(°C)
1 A
120
20
160
0.05
2SK1151(L)(S), 2SK1152(L)(S)
1.0
0.5
0.2
0.1
100
5
2
50
20
10
5
2
1
0.05
V
Pulse Test
DS
0.1
Forward Transfer Admittance
Static Drain to Source on State
0.1
= 20 V
Resistance vs. Drain Current
Pulse Test
Drain Current I
0.2
Drain Current I
vs. Drain Current
0.2
–25°C
0.5
0.5
75°C
V
1.0
D
GS
1.0
D
T
(A)
C
(A)
= 10 V
= 25°C
2
2
15 V
5
5
5