2SK1933 Hitachi Semiconductor, 2SK1933 Datasheet - Page 5

• Manufacturer Part Number: 2SK1933
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2.5
1.5
0.5
1.0
0.8
0.6
0.4
0.2
1
0
2
0
–40
Drain to Source Saturation Voltage
Gate to Source Voltage V
Static Drain to Source on State
Resistance vs. Temperature
Case Temperature Tc (°C)
vs. Gate to Source Voltage
Pulse Test
V
0
4
= 10 V
40
8
12
80
Pulse Test
I = 1 A
D
I = 5 A
D
120
GS
16
5 A
2 A
1 A
(V)
2 A
160
20
0.5
50
20
10
0.5
0.2
0.1
10
5
2
1
0.1
5
2
1
0.5
Pulse Test
Pulse Test
0.2
V
Forward Transfer Admittance
Static Drain to Source on State
DS
Resistance vs. Drain Current
1
–25°C
V
= 20 V
Drain Current I
GS
Drain Current I
Tc = 25°C
vs. Drain Current
0.5
2
= 10 V
1
5
2
10
D
D
(A)
(A)
75°C
2SK1933
20
5
10
50
5