2SK1933 Hitachi Semiconductor, 2SK1933 Datasheet - Page 7

• Manufacturer Part Number: 2SK1933
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

0.03
0.01
1.0
0.3
0.1
3
10
D = 1
0.5
0.2
0.1
100
Normalized Transient Thermal Impedance vs. Pulse Width
10
8
6
4
2
0
Source to Drain Voltage V
Pulse Test
1 m
Reverse Drain Current vs.
0.2
Source to Drain Voltage
Pulse Width PW (s)
V
GS
0.4
= 10 V
10 m
0.6
0.8
SD
0, –5 V
(V)
100 m
1.0
ch–c (t) =
ch–c = 0.83°C/W, T
P
DM
T
PW
S
(t) · ch–c
1
T
C
= 25°C
C
D =
= 25°C
2SK1933
PW
T
10
7