2SK217 Hitachi Semiconductor, 2SK217 Datasheet - Page 2

• Manufacturer Part Number: 2SK217
• Description: Silicon N-Channel Junction FET
• Manufacturer: Hitachi Semiconductor

2SK217
Absolute Maximum Ratings (Ta = 25°C)
Item
Gate to drain current
Drain current
Gate current
Channel power dissipation
Channel temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Gate to drain breakdown
voltage
Gate cutoff current
Gate to source cutoff voltage
Drain current
Forward transfer admittance
Reverse transfer capacitance
Note:
Grade
Mark
I
2
DSS
1. The 2SK217 is grouped by I
C
ZC
2.5 to 5
D
ZD
4 to 8
Symbol
V
I
V
I
|y
Crss
GSS
DSS
(BR)GDO
GS(off)
fs
|
*
1
DSS
as follows.
Min
–30
—
—
2.5
—
—
E
ZE
6 to 12
Symbol
V
I
I
Pch
Tch
Tstg
Typ
—
—
—
—
8.0
0.1
D
G
GDO
Max
—
–10
–2.5
12
—
—
Unit
V
nA
V
mA
mS
pF
Ratings
–30
20
10
150
150
–55 to +150
Test conditions
I
V
V
V
V
V
G
GS
DS
DS
DS
DS
= –100 A
= 5 V, I
= 5 V, V
= 5 V, V
= –0.5 V, V
= 5 V, V
D
GS
GS
GS
Unit
V
mA
mA
mW
= 10 A
C
C
= 0, f = 1 kHz
= 0, f = 1 MHz
= 0
DS
= 0