2SK2980 Hitachi Semiconductor, 2SK2980 Datasheet - Page 4

• Manufacturer Part Number: 2SK2980
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

2SK2980
Main Characteristics
4
1.6
1.2
0.8
0.4
1.0
0.8
0.6
0.4
0.2
0
0
Test condition :
Drain to Source Voltage V
When using alumina ceramic board
Power vs. Temperature Derating
4 V
2.5 V
Typical Output Characteristics
Ambient Temperature Ta (°C)
2
50
4
(12.5 x 20 x 0.7 mm)
100
V
6
GS
Pulse Test
= 1.5 V
150
1.8 V
DS
8
2 V
(V)
200
10
0.03
0.01
100
0.3
0.1
1.0
0.8
0.6
0.4
0.2
30
10
3
1
0
0.1
Operation in
this area is
limited by R
Ta = 25 °C
Drain to Source Voltage V
Gate to Source Voltage V
Typical Transfer Characteristics
Maximum Safe Operation Area
0.3
75°C
1
1
DS(on)
2
10 µs 100 µs
3
25°C
Tc = –25°C
3
10
V
Pulse Test
DS
GS
DS
4
(V)
= 10 V
30
(V)
100
5