2SK3113B NEC, 2SK3113B Datasheet

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2SK3113B

Manufacturer Part Number
2SK3113B
Description
MOS FIELD EFFECT TRANSISTOR
Manufacturer
NEC
Datasheet

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Document No. D18061EJ3V0DS00 (3rd edition)
Date Published June 2007 NS
Printed in Japan
<R>
DESCRIPTION
FEATURES
• Low on-state resistance
• Low gate charge
• Gate voltage rating : ±30 V
• Avalanche capability ratings
ORDERING INFORMATION
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW ≤ 10
characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
R
Q
2SK3113B-S15-AY
2SK3113B(1)-S27-AY
2SK3113B-ZK-E1-AY
2SK3113B-ZK-E2-AY
The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DS(on)
G
= 7.9 nC TYP. (V
PART NUMBER
2. Mounted on glass epoxy board of 40 mm × 40 mm × 1.6 mm
3. Starting T
= 4.4 Ω MAX. (V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Note
μ
ch
s, Duty Cycle ≤ 1%
Note
Note
Note
Note1
C
= 25°C, V
DD
= 25°C)
GS
= 450 V, V
Note3
Note3
DS
C
A
GS
= 10 V, I
= 25°C)
= 25°C)
= 0 V)
= 0 V)
LEAD PLATING
Pure Sn (Tin)
DD
N-CHANNEL POWER MOS FET
= 150 V, R
GS
D
Note2
= 1.0 A)
= 10 V, I
The mark <R> shows major revised points.
A
= 25°C)
G
I
D(pulse)
I
V
V
D
D(DC)
E
P
P
T
= 25
DATA SHEET
T
I
DSS
GSS
AS
stg
AS
= 2.0 A)
T1
T2
ch
SWITCHING
Tube 70 p/tube
Tube 75 p/tube
Tape 2500 p/reel
Ω,
PACKING
V
GS
–55 to +150
MOS FIELD EFFECT TRANSISTOR
= 20 → 0 V
±2.0
±8.0
±30
150
600
1.0
2.0
2.7
20
TO-252 (MP-3ZK) typ. 0.27 g
TO-251 (MP-3-a) typ. 0.39 g
TO-251 (MP-3-b) typ. 0.34 g
mJ
°C
°C
W
W
V
V
A
A
A
PACKAGE
2SK3113B
(TO-251)
(TO-252)
2006

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2SK3113B Summary of contents

Page 1

... DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance = 4.4 Ω MAX DS(on) GS • Low gate charge ...

Page 2

... 2 μ Q di/ TEST CIRCUIT 2 SWITCHING TIME D.U. PG τ τ μ Duty Cycle ≤ 1% Data Sheet D18061EJ3V0DS 2SK3113B MIN. TYP. MAX. UNIT μ 100 A ±10 μ A 2.5 3.5 V 0.5 0.9 S Ω 3.2 4.4 290 10 ...

Page 3

... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140 160 10 ms 1000 R th(ch-A) R th(ch- 100 Pulse Width – s Data Sheet D18061EJ3V0DS 2SK3113B 100 120 140 160 - Case Temperature - ° 125°C/W = 6.25°C/W Single pulse 100 1000 3 ...

Page 4

... V Pulsed 1 0.1 0.01 0.01 100 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 6.0 Pulsed 5.5 5.0 4.5 4.0 3.5 3.0 2.5 1.0 A 2.0 0. Data Sheet D18061EJ3V0DS 2SK3113B T = 125°C ch 75°C 25° −25°C Pulsed Gate to Source Voltage - − 25° 25°C 125°C 75°C ...

Page 5

... I - Drain Current - A D DYNAMIC INPUT/OUTPUT CHARACTERISTICS 600 V = 450 V DD 500 400 300 200 100 – Gate Chage - nC G Data Sheet D18061EJ3V0DS 2SK3113B 0 V Pulsed 0.5 1 150 Ω 300 V 8 150 ...

Page 6

... L - Inductive Load - H 6 SINGLE AVALANCHE ENERGY DERATING FACTOR 120 100 Starting T - Starting Channel Temperature - °C ch Data Sheet D18061EJ3V0DS 2SK3113B V = 150 Ω → ≤ 2 100 125 150 ...

Page 7

... MAX. 0.76±0.12 2.3 TYP. 0.5 ±0.1 1. Gate 2. Drain 3. Source 4. Fin (Drain) EQUIVALENT CIRCUIT 2.3±0.1 0.5±0.1 No Plating Gate Gate Protection Diode 0 to 0.25 0.5±0.1 1.0 Data Sheet D18061EJ3V0DS 2SK3113B 2.3±0.1 6.6±0.2 5.3 TYP. 0.5±0 0.5±0.1 2.3 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) Drain Body Diode Source 7 ...

Page 8

... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SK3113B Not all M8E 02. 11-1 ...

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