2SK3113B NEC, 2SK3113B Datasheet - Page 4

• Manufacturer Part Number: 2SK3113B
• Description: MOS FIELD EFFECT TRANSISTOR
• Manufacturer: NEC

4
8.0
7.0
6.0
5.0
4.0
3.0
2.0
4.5
3.5
2.5
1.5
0.5
4.5
3.5
2.5
1.5
0.5
5
4
3
2
1
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
5
4
3
2
1
0
-50
0
0
V
I
D
DS
= 1 mA
V
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
T
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
DS
= 10 V
GS
ch
- Drain to Source Voltage - V
5
– Gate to Source Voltage - V
- Channel Temperature - °C
5
0
10
V
10
GS
50
= 10 V
15
15
I
D
= 2.0 A
100
1.0 A
8 V
20
20
Pulsed
Pulsed
Data Sheet D18061EJ3V0DS
150
25
25
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
0.01
100
0.01
0.1
10
0.1
0.01
10
1
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
FORWARD TRANSFER CHARACTERISTICS
1
0.01
0
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE
V
V
Pulsed
GS
V
DS
GS
- Gate to Source Voltage - V
= 10 V
5
= 10 V
I
D
I
D
20 V
- Drain Current - A
- Drain Current - A
0.1
T
10
0.1
ch
= 125°C
−25°C
75°C
25°C
15
T
125°C
ch
= − 25°C
1
20
75°C
2SK3113B
1
V
Pulsed
DS
Pulsed
25
= 10 V
25°C
10
30
10