2SK3134 Hitachi Semiconductor, 2SK3134 Datasheet - Page 5

• Manufacturer Part Number: 2SK3134
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

0.5
0.4
0.3
0.2
0.1
20
16
12
0
Static Drain to Source on State Resistance
8
4
0
–50
Drain to Source Saturation Voltage vs.
Pulse Test
Gate to Source Voltage
10 A
Case Temperature
4 V
4
0
Gate to Source Voltage
V
vs. Temperature
GS
50
8
= 10 V
I
D
= 50 A
100
12
I
D
10, 20, 50 A
= 50 A
Pulse Test
Tc
V
20 A
150
16
10, 20 A
GS
( C)
(V)
200
20
500
200
100
100
0.5
0.3
0.1
50
20
10
30
10
Static Drain to Source on State Resistance
1
3
5
1
2
0.1
1
V
Pulse Test
Forward Transfer Admittance vs.
DS
0.3
3
2SK3134(L),2SK3134(S)
= 10 V
Drain Current I
V
Drain Current
Tc = –25 C
GS
vs. Drain Current
10
Drain Current
1
= 4 V
10 V
75 C
30
3
25 C
100
D
I
10
D
Pulse Test
(A)
(A)
300
30
1000
100
5