2SK3134 Hitachi Semiconductor, 2SK3134 Datasheet - Page 6

• Manufacturer Part Number: 2SK3134
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

2SK3134(L),2SK3134(S)
6
1000
500
200
100
50
20
10
50
40
30
20
10
0.1
0
V
I
di / dt = 50 A / µs
V
Reverse Drain Current
D
DS
GS
0.3
Dynamic Input Characteristics
= 75 A
Body–Drain Diode Reverse
80
= 0, Ta = 25°C
Gate Charge
V
Recovery Time
1
DS
160
= 20 V
3
10 V
5 V
240
V
DS
Qg (nc)
V
10
GS
= 20 V
I
DR
10 V
320
5 V
30
(A)
400
100
20
16
12
8
4
0
10000
30000
1000
3000
1000
100
200
100
300
500
10
20
50
0.1 0.2
0
Drain to Source Voltage V
10
Switching Characteristics
Drain to Source Voltage
Typical Capacitance vs.
0.5
Drain Current
1
V
PW = 5 µs, duty < 1%
20
GS
t f
r t
Coss
Crss
Ciss
= 10 V, V
2
t
30
5
d(off)
t
d(on)
I
10
D
DD
V
f = 1 MHz
(A)
20
40
GS
DS
= 10 V
= 0
50
(V)
100
50