2SK4111 Toshiba, 2SK4111 Datasheet

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2SK4111

Manufacturer Part Number
2SK4111
Description
Silicon N-Channel MOS Type
Manufacturer
Toshiba
Datasheet

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Switching Regulator Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods“) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
DD
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
= 90 V, T
GS
DC
Pulse (t = 1 ms)
= 20 kΩ)
ch
DSS
th
= 2.0 to 4.0 V (V
= 25°C(initial), L = 6.36 mH, I
(Note 1)
(Note 1)
(Note 2)
= 100 μA (max) (V
DS (ON)
(Ta = 25°C)
Symbol
V
V
V
fs
E
E
T
I
I
T
P
DGR
GSS
DSS
I
DP
AR
| = 8.5S (typ.)
AS
AR
stg
D
ch
R
R
D
2SK4111
Symbol
DS
th (ch-c)
th (ch-a)
= 0.54 Ω (typ.)
= 10 V, I
DS
= 600 V)
-55 to 150
Rating
600
600
±30
363
150
D
4.5
AR
10
40
45
10
1
= 1 mA)
Max
2.78
62.5
= 10 A, R
Unit
mJ
mJ
°C/W
°C/W
G
°C
°C
W
V
V
V
A
A
Unit
= 25 Ω
Weight: 1.9 g (typ.)
JEDEC
JEITA
TOSHIBA
2-10R1B
SC-67
2008-08-22
2SK4111
Unit: mm

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2SK4111 Summary of contents

Page 1

... 363 AS (Note 4 150 ch T -55 to 150 stg Symbol Max R 2.78 th (ch-c) R 62.5 th (ch-a) = 25°C(initial 6.36 mH 2SK4111 Unit JEDEC — A JEITA SC-67 W TOSHIBA 2-10R1B mJ Weight: 1.9 g (typ °C °C Unit °C/W °C Ω G 2008-08-22 Unit: mm ...

Page 2

... A ⎯ ⎯ 19 Min Typ. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1300 ⎯ 16 2008-08-22 2SK4111 Max Unit ±10 μA ⎯ V μA 100 ⎯ V 4.0 V Ω 0.75 ⎯ S ⎯ ⎯ pF ⎯ ⎯ ⎯ ns ⎯ ⎯ ...

Page 3

... DS V – COMMON SOURCE Tc = 25℃ 8 PULSE TEST 2 GATE-SOURCE VOLTAGE – (ON COMMON SOURCE Tc = 25°C PULSE TEST V、15V 0.1 0 DRAIN CURRENT I (A) D 2SK4111 50 (V) 20 (V) 100 2008-08-22 ...

Page 4

... CASE TEMPERATURE Tc (°C) DYNAMIC INPUT / OUTPUT CHARACTERISTICS 500 400 300 100 V 400 200 Common source 200 100 Tc = 25°C Pulse test TOTAL GATE CHARGE Q (nC) g 2008-08-22 2SK4111 −1.2 (V) 160 ...

Page 5

... CHANNEL TEMPERATURE (INITIAL) T (° VDSS − TEST CIRCUIT WAVE FORM Ω ⋅ ⋅ L Ε 6.36mH V DD 2SK4111 125 150 V DS ⎛ ⎞ B VDSS 2 I ⎜ ⎟ ⋅ ⎜ ⎟ − B VDSS V DD ⎝ ⎠ 2008-08-22 ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK4111 20070701-EN GENERAL 2008-08-22 ...

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