IRL520N IRF, IRL520N Datasheet - Page 2

• Manufacturer Part Number: IRL520N
• Description: HEXFET Power MOSFET
• Manufacturer: IRF

IRL520N
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
L
V
R
V
g
I
I
Q
Q
Q
t
t
t
t
L
C
C
C
DSS
I
I
V
t
Q
t
GSS
d(on)
r
d(off)
f
D
SM
S
rr
on
V
fs
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
g
gs
gd
SD
Starting T
rr
Repetitive rating; pulse width limited by
(BR)DSS
R
max. junction temperature. ( See fig. 11 )
G
= 25 , I
/ T
J
J
= 25°C, L = 4.7mH
Internal Drain Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
AS
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
= 6.0A. (See Figure 12)
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Pulse width
I
T
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
SD
1.0
3.1
–––
Min. Typ. Max. Units
–––
–––
–––
–––
–––
J
Intrinsic turn-on time is negligible (turn-on is dominated by L
175°C
6.0A, di/dt
0.11
–––
––– 0.18
––– 0.22
––– 0.26
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
440
4.0
7.5
4.5
–––
–––
–––
410
110
35
23
22
97
50
–––
–––
–––
–––
250
–––
–––
–––
–––
–––
100
–––
–––
300µs; duty cycle
2.0
4.6
160
620
–––
25
20
10
1.3
35
10
340A/µs, V
V/°C
µA
nA
nC
nH
pF
ns
nC
V
V
S
ns
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
DD
J
J
= 6.0A
= 6.0A
= 25°C, I
= 25°C, I
= 11
= 8.2
= V
= 25V, I
= 100V, V
= 80V, V
= 80V
= 25V
= 0V, I
= 10V, I
= 5.0V, I
= 4.0V, I
= 16V
= -16V
= 5.0V, See Fig. 6 and 13
= 50V
= 0V
2%.
V
GS
(BR)DSS
, I
V
D
See Fig. 10
D
S
F
D
D
GS
= 250µA
D
D
Conditions
GS
Conditions
=6.0A
= 6.0A, V
= 250µA
= 6.0A
= 6.0A
GS
= 6.0A
= 5.0A
,
= 5.0V
= 0V, T
= 0V
D
= 1mA
GS
J
= 150°C
G
= 0V
G
S
+L
D
D
S
)
S
D