IRL520N IRF, IRL520N Datasheet - Page 5
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IRL520N
Manufacturer Part Number
IRL520N
Description
HEXFET Power MOSFET
Manufacturer
IRF
Datasheet
1.IRL520N.pdf
(8 pages)
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0.01
0.1
10
0.00001
1 0
1
8
6
4
2
0
2 5
Fig 9. Maximum Drain Current Vs.
D = 0.50
0.20
0.10
0.05
0.02
0.01
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5 0
T , C ase T em perature (°C )
Case Temperature
C
7 5
(THERMAL RESPONSE)
1 0 0
0.0001
SINGLE PULSE
1 2 5
t , Rectangular Pulse Duration (sec)
1
1 5 0
1 7 5
A
0.001
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
t
R
d(on)
Pulse Width
Duty Factor
1. Duty factor D = t / t
2. Peak T = P
G
Notes:
5.0V
V
GS
t
r
V
J
DS
0.01
µs
DM
x Z
1
thJC
IRL520N
D.U.T.
P
2
t
DM
d(off)
+ T
R
D
C
t
1
t
f
t
2
+
-
V
DD
0.1