IRL540NS IRF, IRL540NS Datasheet - Page 2

• Manufacturer Part Number: IRL540NS
• Description: HEXFET Power MOSFET
• Manufacturer: IRF

Electrical Characteristics @ T
IRL540NS/L
Notes:
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
Source-Drain Ratings and Characteristics
I
V
R
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
L
I
I
V
t
Q
t
DSS
GSS
d(on)
d(off)
r
f
SM
on
S
rr
V
fs
S
For recommended soldering techniques refer to application note #AN-994.
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
g
gs
gd
SD
rr
Repetitive rating; pulse width limited by
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
I
T
Starting T
SD
G
J
= 25 , I
175°C
/ T
18A, di/dt
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Source Inductance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
= 25°C, L = 1.9mH
AS
= 18A. (See Figure 12)
180A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
Uses IRL540N data and test conditions
Pulse width
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
1.0
Min. Typ. Max. Units
14
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
1800 –––
0.11 –––
–––
––– 0.044
––– 0.053
––– 0.063
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
7.5
350
170
–––
–––
–––
190
1.1
11
81
39
62
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
2.0
9.4
290
1.3
1.7
300µs; duty cycle
25
74
38
120
36
V/°C
nA
nC
nH
pF
µC
ns
ns
V
V
S
A
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
I
V
V
I
R
Between lead,
and center of die contact
V
V
V
V
V
V
R
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
di/dt = 100A/µs
T
D
D
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= 18A
= 18A
= 25°C, I
= 25°C, I
= 5.0
= 2.7
= V
= 25V, I
= 100V, V
= 80V, V
= 80V
= 25V
= 0V, I
= 10V, I
= 5.0V, I
= 4.0V, I
= 16V
= -16V
= 5.0V, See Fig. 6 and 13
= 50V
= 0V
2%.
GS
, I
D
See Fig. 10
V
S
F
D
D
D
Conditions
= 250µA
D
D
GS
GS
Conditions
= 18A, V
= 18A
= 250µA
= 18A
= 18A
GS
= 18A
= 15A
= 5.0V
= 0V, T
= 0V
D
= 1mA
GS
J
= 150°C
= 0V
G
S
+L
D
D
S
)