SI5519DU Vishay Siliconix, SI5519DU Datasheet - Page 4

• Manufacturer Part Number: SI5519DU
• Description: N- and P-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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Si5519DU
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.20
0.16
0.12
0.08
0.04
0.00
10
25
20
15
10
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
5
0
0
0
0
I
D
= 6.7 A
V
GS
2
1
= 2.5 V
V
DS
5
Output Characteristics
Q
g
V
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
GS
I
4
D
Gate Charge
- Drain Current (A)
= 5 V thru 3.5 V
V
2
DS
10
= 10 V
6
V
GS
3
= 4.5 V
8
V
V
V
GS
15
V
GS
GS
GS
= 16 V
= 2.5 V
= 3 V
4
10
= 2 V
12
20
5
1000
800
600
400
200
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
- 25
rss
0.5
4
V
V
GS
Transfer Characteristics
DS
T
0
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
T
- Gate-to-Source Voltage (V)
T
J
1.0
J
= 25 °C
= 125 °C
Capacitance
25
8
C
oss
1.5
V
I
50
S-81449-Rev. B, 23-Jun-08
D
Document Number: 74406
GS
= 5 A
C
= 4.5 V,
12
iss
75
2.0
T
J
100
= - 55 °C
V
I
D
GS
16
= 5 A
2.5
= 2.5 V,
125
150
3.0
20
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