SI5519DU Vishay Siliconix, SI5519DU Datasheet - Page 5

• Manufacturer Part Number: SI5519DU
• Description: N- and P-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74406
S-81449-Rev. B, 23-Jun-08
0.001
0.01
1.6
1.4
1.2
1.0
0.8
0.6
100
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
J
- Source-to-Drain Voltage (V)
I
Threshold Voltage
0.4
D
T
= 150 °C
= 250 µA
J
25
- Temperature (°C)
0.6
50
75
0.001
0.01
T
0.8
100
0.1
J
10
= 25 °C
1
0.1
100
* V
Safe Operating Area, Junction-to-Ambient
Limited by R
1.0
GS
Single Pulse
125
T
> minimum V
A
= 25 °C
V
DS
150
1.2
- Drain-to-Source Voltage (V)
DS(on)
1
GS
*
BVDSS Limited
at which R
DS(on)
10
0.10
0.08
0.06
0.04
0.02
0.00
30
25
20
15
10
is specified
5
0
0.001
1
10 ms
1 s
10 s
100 ms
DC
On-Resistance vs. Gate-to-Source Voltage
0.01
100
V
2
GS
0.1
- Gate-to-Source Voltage (V)
Single Pulse Power
T
A
= 25 °C
Time (s)
3
1
Vishay Siliconix
Si5519DU
10
T
A
www.vishay.com
4
= 125 °C
I
100
D
= 5 A
1000
5
5
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