SI5519DU Vishay Siliconix, SI5519DU Datasheet - Page 9

• Manufacturer Part Number: SI5519DU
• Description: N- and P-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74406
S-81449-Rev. B, 23-Jun-08
0.001
0.01
100
1.2
1.1
1.0
0.9
0.8
0.7
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
T
0.2
J
= 150 °C
I
D
V
= 250 µA
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T - Temperature (°C)
25
0.6
50
T
75
0.001
J
0.01
100
0.8
0.1
= 25 °C
10
1
0.1
100
* V
Limited by R
Safe Operating Area, Junction-to-Case
1.0
GS
Single Pulse
125
T
A
> minimum V
= 25 °C
V
DS
150
1.2
- Drain-to-Source Voltage (V)
DS(on)
1
BVDSS Limited
GS
*
at which R
DS(on)
10
0.20
0.16
0.12
0.08
0.04
0.00
30
25
20
15
10
is specified
5
0
0.001
1
10 s
10 ms
100 ms
DC
1 s
On-Resistance vs. Gate-to-Source Voltage
0.01
100
V
GS
2
Single Pulse Power
- Gate-to-Source Voltage (V)
0.1
T
A
= 25 °C
Time (s)
3
1
Vishay Siliconix
T
A
= 125 °C
Si5519DU
10
www.vishay.com
4
I
D
100
= 4 A
1000
5
9
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