2SJ244 Hitachi Semiconductor, 2SJ244 Datasheet - Page 2

• Manufacturer Part Number: 2SJ244
• Description: Silicon P-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SJ244
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source cutoff current
Zero gate voltage drain current I
Gate to source cutoff voltage
Static drain to source on state
resistance
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Turn-off delay time
Body to drain diode forward
voltage
Note:
2
2. Value on the alumina ceramic board (12.5 20 0.7 mm)
3. Marking is “JY”.
1. Pulse test
100 s, duty cycle
Symbol Min
V
V
I
V
R
R
|y
Ciss
Coss
Crss
t
t
V
GSS
DSS
(on)
(off)
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)1
DS(on)2
fs
|
10%
–12
—
—
–0.4
—
—
—
—
—
—
—
—
—
7
Symbol
V
V
I
I
Pch*
Tch
Tstg
Typ
—
—
—
—
—
0.65
0.5
1.8
130
50
260
365
1450
—
D
D(pulse)
DSS
GSS
2
*
1
Max
—
—
–1
–1.4
0.9
—
—
—
—
—
—
—
7
5
Unit
V
V
V
S
pF
pF
pF
ns
ns
V
A
A
Ratings
–12
1
150
–55 to +150
7
2
4
Test conditions
I
I
V
V
I
I
I
I
V
f = 1 MHz
I
R
I
D
G
D
D
D
D
D
F
GS
DS
DS
L
= 4 A*
= –1 mA, V
= 10 A, V
= –100 A, V
= –0.5 A*
= –1 A*
= –1 A*
= –0.2 A*
= 51
= –8 V, V
= –5 V, V
= 6 V, V
1
, V
1
1
, V
, V
1
1
GS
Unit
V
V
A
A
W
, V
, Vin = –4 V,
C
C
DS
GS
GS
DS
GS
GS
DS
= 0
GS
DS
= 0
= 0
= –4 V
= –5 V
= 0,
= 0
= 0
= –2.5 V
= –5 V