2SJ244 Hitachi Semiconductor, 2SJ244 Datasheet - Page 4

• Manufacturer Part Number: 2SJ244
• Description: Silicon P-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SJ244
4
0.5
0.2
1.0
-1.0
-0.6
-0.2
-0.8
-0.4
20
10
5
2
-0.1
0
Drain to Source Saturation Voltage vs.
V
Pulse Test
Forward Transfer Admittance vs.
DS
-0.2
Gate to Source Voltage
= -5 V
-0.1
-1
Gate to Source Voltage
Drain Current
-0.5
Drain Current
-0.2
-2
-1.0
-0.5
I
D
-3
-2
(A)
V
I = -1 A
GS
D
Ta = -25 °C
Pulse Test
-4
( V )
-5
+25
+75
-10
-5
0.1
1.0
0.2
0.5
1.0
0.6
0.2
0.8
0.4
10
2
5
0
Drain to Source on State Resistance vs.
-0.1
Drain to Source on State Resistance vs.
-25
Pulse Test
Pulse Test
-0.2
I
D
0
Case Temperature Tc ( °C )
= -1 A
-0.5 A
Drain Current
Case Temperature
-0.5
Drain Current
25
-2 V
V
V
GS
-1.0
GS
= -2.5 V
= -4 V
I
D
50
-3 V
-2
(A)
V
I
GS
D
75
-5
= -1 A
-0.5 A
= -4 V
-10
100