2SJ471 Hitachi Semiconductor, 2SJ471 Datasheet - Page 5

• Manufacturer Part Number: 2SJ471
• Description: Silicon P Channel DV-L MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

–1.0
–0.8
–0.6
–0.4
–0.2
0.10
0.08
0.06
0.04
0.02
–40
0
Static Drain to Source on State Resistance
0
Drain to Source Saturation Voltage
V
GS
Gate to Source Voltage V
Cate Temperature Tc ( C)
vs. Gate to Source Voltage
–4
0
= –4 V
–10 V
vs. Temperature
–8
40
–12
–5, –10, –20 A
80
I
I
D
D
Pulse Test
Pulse Test
= –20 A
= –20 A
–5, –10 A
120
–16
–10 A
GS
–5 A
(V)
–20
160
0.05
0.01
0.02
0.5
0.2
0.1
0.5
0.2
0.1
50
10
20
–0.1
5
2
1
Static Drain to Source on State Resistance
–1
Pulse Test
–0.2 –0.5 –1 –2
Foward Transfer Admittance vs.
–2
Drain Current I
Drain Current I
Tc = –25 C
vs. Drain Current
Drain Current
75 C
–5
V
GS
–10
25 C
= –4 V
–10 V
–5 –10 –20
V
Pulse Test
D
D
DS
–20
(A)
(A)
= –10 V
2SJ471
–50
–50
5