2SJ471 Hitachi Semiconductor, 2SJ471 Datasheet - Page 6

• Manufacturer Part Number: 2SJ471
• Description: Silicon P Channel DV-L MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

2SJ471
6
1000
500
200
100
–50
–10
–20
–30
–40
20
10
50
–0.1
5
0
0
V
–0.2 –0.5 –1 –2
I
DS
D
Reverse Drain Current I
Dynamic Input Characteristics
= –30 A
Body to Drain Diode Reverse
V
16
DD
Gate Charge Qg (nc)
= –25 V
Recovery Time
–10 V
V
–5 V
32
DD
di / dt = 50 A / s
V
GS
= –5 V
–10 V
–25 V
= 0, Ta = 25 C
48
–5 –10 –20
V
GS
DR
64
(A)
–50
80
0
–4
–8
–12
–16
–20
10000
5000
2000
1000
1000
500
500
200
100
200
100
20
10
50
–0.1
5
0
–0.2 –0.5 –1 –2
Drain to Source Voltage V
V
f = 1 MHz
GS
–4
Switching Characteristics
Drain to Source Voltage
Typical Capacitance vs.
= 0
Drain Current I
V
duty < 1 %
GS
r t
–8
= –10 V, V
t
d(off)
t
–12
d(on)
–5 –10 –20
D
t f
DD
(A)
Ciss
Coss
Crss
–16
DS
= –10 V
(V)
–50
–20