TPC8122 Toshiba Semiconductor, TPC8122 Datasheet - Page 2

• Manufacturer Part Number: TPC8122
• Description: Field Effect Transistor Silicon P Channel MOS Type
• Manufacturer: Toshiba Semiconductor

Thermal Characteristics
Marking
Thermal resistance, channel to ambient
(t = 10 s)
Thermal resistance, channel to ambient
(t = 10 s)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating; pulse width limited by maximum channel temperature
Note 5: • on the lower left of the marking indicates Pin 1.
Note 6: A line under a Lot No. identifies the indication of product Labels.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
(Note 5)
* Weekly code: (Three digits)
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
T P C 8 1 2 2
DD
= −24 V, T
Characteristics
(a)
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
ch
= 25°C (initial), L = 500 μH, R
Part No. (or abbreviation code)
Lot No.
(weekly code)
Note 6
25.4 × 25.4 × 0.8
(Note 2a)
(Note 2b)
FR-4
(Unit: mm)
R
R
Symbol
th (ch-a)
th (ch-a)
2
G
65.8
Max
125
= 25 Ω, I
(b) Device mounted on a glass-epoxy board (b)
°C/W
°C/W
Unit
AR
= −12 A
(b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
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2009-09-29
TPC8122