TPC8122 Toshiba Semiconductor, TPC8122 Datasheet - Page 4

• Manufacturer Part Number: TPC8122
• Description: Field Effect Transistor Silicon P Channel MOS Type
• Manufacturer: Toshiba Semiconductor

−25
−20
−15
−10
100
−50
−40
−30
−20
−10
0.1
−5
10
−0.1
0
1
0
0
0
Common source
V DS = −10 V
Pulse test
−10
−8
−6
−5
Drain−source voltage V
Gate−source voltage V
−0.2
−1
Ta = −55°C
Drain current I
Ta = 100°C
25°C
−1
−0.4
−2
100
I
I
|Y
D
D
−4.5
fs
– V
– V
−3.4
−4.2
| – I
−55°C
DS
GS
−4
−0.6
D
25
−3.8
−3
D
−3.6
−10
GS
(A)
DS
Common source
V DS = −10 V
Pulse test
Common source
Ta = 25°C
Pulse test
V GS = −2.6 V
−3.2
−0.8
−4
(V)
(V)
−2.8
−3
−100
−1
−5
4
−0.5
−0.4
−0.3
−0.2
−0.1
−50
−40
−30
−20
−10
100
10
−0.1
0
0
1
0
0
−10
−8
Common source
Ta = 25°C
Pulse test
−6
−5
Drain-source voltage V
Gate−source voltage V
−0.4
−2
−3
Drain current I
−1
−4
R
−0.8
V
−4
DS (ON)
I
−3.8
DS
D
V GS = −4V
−4.5
−6
– V
– V
−10
DS
GS
−1.2
– I
−6
−3.6
D
I D = −12 A
D
−10
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DS
GS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
V GS = −2.6V
−1.6
−8
(V)
(V)
−3.4
2009-09-29
−3.2
−2.8
TPC8122
−3
−100
−10
−2