GT8G131 Toshiba Semiconductor, GT8G131 Datasheet
GT8G131
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GT8G131 Summary of contents
Page 1
... A) C Symbol Rating Unit V 400 V CES ±6 V GES V ±8 V GES 150 150 °C j -55~150 T °C stg 2 ´ 1 GT8G131 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1C Weight: 0.080 g (typ.) Equivalent Circuit 2003-03-18 ...
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... < = 100 Duty cycle < off ¾ (j-a) 2 ´ 1.5 t] Week of manufacture (01 for first week of year, continues 53) Year of manufacture (One low-order digits of calendar year) 2 GT8G131 Min Typ. Max ¾ ¾ ±10 ¾ ¾ 10 ¾ 0.6 1.5 ¾ 3.0 7.0 ¾ ¾ 3800 ¾ ...
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... V Common emitter Tc = 125°C 160 3.5 V 120 3 2 Collector-emitter voltage V CE (V) 5 Common emitter -80 - GT8G131 I – 4.0 V 4 3 – 4 3.5 V 3 ...
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... Tc = 125° Gate-emitter voltage V GE (V) 5000 3000 1000 300 100 C res 30 10 160 Collector-emitter voltage V CE (V) 4 GT8G131 V – 150 A 120 – 150 A 120 – ...
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... Gate charge Q G (nC) Maximum Operating Area 800 600 400 350 V 200 Tc < = 70° < < = 200 W 0 200 0 40 Peak collector current GT8G131 , V – 120 160 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 GT8G131 000707EAA 2003-03-18 ...