GT8G131 Toshiba Semiconductor, GT8G131 Datasheet - Page 4

• Manufacturer Part Number: GT8G131
• Description: N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
• Manufacturer: Toshiba Semiconductor

2.0
1.6
1.2
0.8
0.4
5
4
3
2
1
0
5
4
3
2
1
0
0
-80
0
0
Common emitter
Tc = -40°C
Common emitter
Tc = 70°C
Common emitter
V GE = 5 V
I C = 1 mA
-40
Gate-emitter voltage V GE (V)
Gate-emitter voltage V GE (V)
1
1
Case temperature Tc (°C)
0
V
GE (OFF)
V
V
2
2
CE
CE
40
– V
– V
60 A
60 A
GE
GE
– Tc
3
3
90 A
90 A
80
120 A
I C = 150 A
120 A
I C = 150 A
4
4
120
160
5
5
4
5000
3000
1000
300
100
30
10
5
4
3
2
1
0
5
4
3
2
1
0
0
0
1
Common emitter
Tc = 25°C
Common emitter
Tc = 125°C
Collector-emitter voltage V CE (V)
3
Gate-emitter voltage V GE (V)
Gate-emitter voltage V GE (V)
C res
1
1
10
C oes
V
V
C ies
2
2
C – V
CE
CE
30
– V
– V
60 A
60 A
CE
GE
GE
3
3
90 A
90 A
100
Common emitter
V GE = 0 V
f = 1 MHz
Tc = 25°C
120 A
120 A
I C = 150 A
I C = 150 A
4
4
300
GT8G131
2003-03-18
1000
5
5