GT60J321 Toshiba, GT60J321 Datasheet
GT60J321
Available stocks
Related parts for GT60J321
GT60J321 Summary of contents
Page 1
... A) C Symbol Rating Unit V 600 CES ±25 V GES 120 ECF I 120 ECPF P 200 C T 150 ° -55~150 °C stg ¾ 0.8 N・m Collector Emitter 1 GT60J321 JEDEC ― JEITA ― W TOSHIBA 2-21F2C Weight: 9.75 g (typ.) 2002-01-18 Unit: mm ...
Page 2
... - off = di/dt = -100 A/ ¾ (j-c) ¾ (j-c) 2 GT60J321 Min Typ. Max Unit ¾ ¾ ±500 ¾ ¾ 1.0 mA ¾ 3.0 6.0 ¾ 1.2 1.7 ¾ 1.55 1.9 ¾ ¾ 13500 ¾ ¾ 0.25 ¾ ¾ 0.35 ¾ ...
Page 3
... 2 Gate-emitter voltage Gate-emitter voltage - GT60J321 V – Common emitter Tc = -40°C 120 ( – Common emitter Tc = 125°C 120 (V) ...
Page 4
... DC operation Single non-repetitive pulse 0.5 300 Tc = 25°C 0.3 Curves must be derated linearly with increase in temperature. 0 Collector-emitter voltage GT60J321 C – ies C oes C res 30 100 300 1000 3000 ( ms* 100 ms* 1 ms* 10 ms* 30 100 1000 300 (V) CE ...
Page 5
... 2 200 MHz Tc = 25° 300 500 0 5 GT60J321 r – ( 25°C Diode IGBT Pulse width t ( – 500 300 ...
Page 6
... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 100 6 GT60J321 000707EAA 2002-01-18 ...