GT35J321 Toshiba, GT35J321 Datasheet - Page 3

• Manufacturer Part Number: GT35J321
• Description: Fourth Generation IGBT
• Manufacturer: Toshiba

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100
100
80
60
40
20
80
60
40
20
0
0
4
3
2
1
0
−40
0
0
Common emitter
Tc = −40°C
Common emitter
Tc = 125°C
Common emitter
V GE = 15 V
Collector-emitter voltage V CE (V)
Collector-emitter voltage V CE (V)
1
1
0
Case temperature Tc (°C)
20
V
40
CE (sat)
2
2
I
I
C
C
20
– V
– V
10
CE
CE
– Tc
80
3
3
15
15
10
120
V GE = 7 V
V GE = 7 V
I C = 100 A
4
4
70
50
30
10
9
8
9
8
160
5
5
3
100
100
80
60
40
20
80
60
40
20
0
0
0
0
Common emitter
Tc = 25°C
Common emitter
V CE = 5 V
Collector-emitter voltage V CE (V)
Gate-emitter voltage V GE (V)
1
2
Tc = 125°C
20
2
4
I
I
C
C
– V
– V
GE
CE
25
3
6
15
10
−40
V GE = 7 V
4
8
GT35J321
2008-03-26
9
8
10
5