AO4900A Alpha & Omega Semiconductors, AO4900A Datasheet - Page 4

• Manufacturer Part Number: AO4900A
• Description: Dual N-Channel Enhancement Mode Field Effect Transistor
• Manufacturer: Alpha & Omega Semiconductors

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AO4900A
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
100.0
5
4
3
2
1
0
10.0
1.0
0.1
0
0.01
0.1
10
0.1
0.00001
1
Figure 9: Maximum Forward Biased Safe
R
limited
Figure 7: Gate-Charge Characteristics
DS(ON)
2
D=T
T
R
J,PK
θJA
Operating Area (Note E)
=62.5°C/W
on
=T
V
I
0.0001
D
/T
4
DS
=6.9A
A
+P
DC
=15V
1
DM
Q
V
.Z
g
DS
(nC)
θJA
6
Single Pulse
(Volts)
.R
Figure 11: Normalized Maximum Transient Thermal Impedance
θJA
0.001
10s
8
10
T
T
J(Max)
A
=25°C
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
10
=150°C
0.01
10µs
1ms
10ms
1s
100
12
Pulse Width (s)
0.1
50
40
30
20
10
0.0001 0.001
1400
1200
1000
0
800
600
400
200
Figure 10: Single Pulse Power Rating Junction-to-
0
0
1
Figure 8: Capacitance Characteristics
5
P
0.01
D
T
Ambient (Note E)
Pulse Width (s)
on
10
C
10
0.1
rss
T
V
DS
(Volts)
15
1
C
iss
100
T
T
20
10
C
J(Max)
A
=25°C
oss
=150°C
100
25
1000
1000
30