MP6901 Toshiba, MP6901 Datasheet - Page 2

• Manufacturer Part Number: MP6901
• Description: High Power Switching Applications / Hammer Drive
• Manufacturer: Toshiba

Thermal Characteristics
Electrical Characteristics
Emitter-Collector Diode Ratings and Characteristics
Thermal resistance of junction to
ambient
(6 devices operation, Ta = 25°C)
Thermal resistance of junction to case
(6 devices operation, Tc = 25°C)
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Saturation voltage
Transition frequency
Collector output capacitance
Switching time
Forward current
Surge current
Forward voltage
Reverse recovery time
Reverse recovery charge
Characteristics
Characteristics
Characteristics
Collector-emitter
Base-emitter
Turn-on time
Storage time
Fall time
(Ta = 25°C) (NPN transistor)
V
V
ΣR
V
ΣR
V
Symbol
Symbol
Symbol
(BR) CBO
(BR) CEO
h
h
CE (sat)
BE (sat)
I
I
I
I
FE (1)
FE (2)
CBO
CEO
C
EBO
I
FSM
t
Q
th (j-a)
t
V
th (j-c)
T
FM
f
stg
t
on
t
T
ob
rr
f
L
F
rr
V
V
V
I
I
V
V
I
I
V
V
I
t = 1 s, 1 shot
I
I
C
C
C
C
B1
F
F
Max
CB
CE
EB
CE
CE
CE
CB
260
5.0
25
= 1 A, I
= 4 A, V
= 1 mA, I
= 10 mA, I
= 3 mA, I
= 3 mA, I
= −I
20 µs
= 5 V, I
= 100 V, I
= 80 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 10 V, I
B2
2
Input
B
BE
= 6 mA, duty cycle ≤ 1%
°C/W
°C/W
Unit
= 0 A
E
B
B
C
C
C
C
°C
Test Condition
Test Condition
B
B
E
= 0 A
= 6 mA
= 6 mA
= −3 V, dI
= 0 A
= 1 A
= 3 A
= 0.5 A
E
= 0 A
= 0 A
= 0 A, f = 1 MHz
I
I
B1
B2
= 0 A
―
F
(Ta = 25°C)
/dt = −50 A/µs
V
CC
= 30 V
Output
2000
1000
Min
100
Min
0.5
80
―
―
―
―
―
―
―
―
―
―
―
―
―
―
Typ.
Typ.
0.2
1.5
0.6
1.0
60
35
―
―
―
―
―
―
―
―
―
―
―
―
8
2002-11-20
Max
Max
2.5
1.5
2.0
2.0
20
20
―
―
―
―
―
―
―
―
―
―
―
MP6901
4
6
MHz
Unit
Unit
mA
µC
µA
µA
pF
µs
µs
―
V
V
V
A
A
V