HAT1047R Renesas Technology, HAT1047R Datasheet - Page 3

• Manufacturer Part Number: HAT1047R
• Description: Silicon P Channel Power MOS FET High Speed Power Switching
• Manufacturer: Renesas Technology

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HAT1047R, HAT1047RJ
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current
Zero gate voltage drain current
Zero gate voltage
drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Rev.5.00, Aug.27.2003, page 3 of 9
HAT1047R
HAT1047RJ I
Symbol
I
I
R
|y
Ciss
Coss
Crss
Qg
t
t
V
t
I
V
R
Qgs
Qgd
t
t
GSS
DSS
DSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
DS(on)
fs
|
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Min
–30
±20
—
—
—
—
–1.0
—
—
9.6
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
10
19
16
3500
750
520
64
10
12
23
45
80
25
–0.82
45
Max
—
—
±10
±1
—
–20
–2.5
12
25
—
—
—
—
—
—
—
—
—
—
—
–1.07
—
Unit
V
mV
V
m
m
S
pF
pF
nc
nc
ns
ns
ns
ns
V
ns
pF
nc
A
A
A
A
Test Conditions
I
I
V
V
V
Ta = 125°C
V
I
I
I
V
V
f = 1 MHz
V
V
I
V
V
R
R
IF = –14 A, V
IF = –14 A, V
diF/ dt = 100 A/ s
D
G
D
D
D
D
GS
DS
DS
DS
DS
GS
DD
GS
GS
DD
L
L
= –10 mA, V
= ±100 A, V
= –7 A, V
= –7 A, V
= –7 A, V
= –14 A
= 1.43
= 4.7
= –30 V, V
= –24 V, V
= –10 V, I
= –10 V
= ± 16V, V
= 0
= –10 V
= –10 V
= –10 V, I
–10 V
GS
GS
DS
GS
GS
D
D
= –10 V
= –10 V
= –4.5 V
GS
DS
GS
GS
= –1 mA
DS
= –7A
= 0
= 0
= 0
= 0
= 0
= 0
= 0
Note4
Note4
Note4
Note4