HAT1047R Renesas Technology, HAT1047R Datasheet - Page 6

• Manufacturer Part Number: HAT1047R
• Description: Silicon P Channel Power MOS FET High Speed Power Switching
• Manufacturer: Renesas Technology

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HAT1047R, HAT1047RJ
Rev.5.00, Aug.27.2003, page 6 of 9
500
200
100
-10
-20
-30
-40
-50
50
20
10
0
-1
0
Reverse Drain Current
I
D
Dynamic Input Characteristics
-2
V
Body-Drain Diode Reverse
= -14 A
16
DS
Gate Charge
V
DD
Recovery Time
-5
32
= - 5 V
di / dt = 100 A / s
V
-10 V
-25 V
-10
GS
48
= 0, Ta = 25 C
V
-20
Qg (nc)
DD
I
= - 5 V
DR
-10 V
-25 V
64
-50
(A)
DataSheet4U.com
V
GS
-100
80
0
-4
-8
-12
-16
-20
30000
10000
1000
1000
100
500
200
100
20
50
10
-0.1 -0.2
0
Drain to Source Voltage V
-10
Switching Characteristics
Drain to Source Voltage
Typical Capacitance vs.
Drain Current
-0.5
V
PW = 5
GS
-20
-1
= -10 V, V
-2
s, duty < 1 %
-30
Coss
Ciss
Crss
I
t
D
DD
d(off)
-5
V
f = 1 MHz
(A)
-40
GS
DS
= -10 V
t
-10
d(on)
= 0
(V)
t f
r t
-20
-50