HAT1047R Renesas Technology, HAT1047R Datasheet - Page 5

• Manufacturer Part Number: HAT1047R
• Description: Silicon P Channel Power MOS FET High Speed Power Switching
• Manufacturer: Renesas Technology

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HAT1047R, HAT1047RJ
Rev.5.00, Aug.27.2003, page 5 of 9
-200
-160
-120
-80
-40
40
32
24
16
8
0
0
Static Drain to Source on State Resistance
-40
Drain to Source Saturation Voltage vs.
Pulse Test
V
Gate to Source Voltage
GS
-10 V
Case Temperature
-4
= -4.5 V
0
Gate to Source Voltage
I
-5 A
D
-2 A
vs. Temperature
= -10 A
-8
40
-12
80
I
-2, -5, -10 A
Pulse Test
D
Tc
V
= -2,-5 A
-16
120
GS
( C)
-10 A
(V)
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-20
160
100
1.0
500
200
100
10
50
20
1.0
0.5
50
20
10
Static Drain to Source on State Resistance
5
2
5
2
-1
0.1
V
Pulse Test
Forward Transfer Admittance vs.
-2
V
DS
Pulse Test
-4.5 V
GS
= -10 V
Drain Current
= -10 V
Drain Current I
-5
vs. Drain Current
1.0
Drain Current
-10
-20
Tc = –25 C
75 C
I
D
10
25 C
D
-50
(A)
(A)
-100
-200
100