HAT1047R Renesas Technology, HAT1047R Datasheet - Page 4

• Manufacturer Part Number: HAT1047R
• Description: Silicon P Channel Power MOS FET High Speed Power Switching
• Manufacturer: Renesas Technology

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HAT1047R, HAT1047RJ
Main Characteristics
Rev.5.00, Aug.27.2003, page 4 of 9
4.0
3.0
2.0
-50
-40
-30
-20
-10
1.0
0
0
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW
Drain to Source Voltage
Power vs. Temperature Derating
Typical Output Characteristics
Ambient Temperature
-2
-10 V
-8 V
50
-4
100
-6
V
GS
Pulse Test
150
V
Ta ( C)
-8
= -2 V
DS
-3 V
-4 V
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10s)
(V)
-10
200
-0.01
-500
-100
-0.1
-10
-50
-40
-30
-20
-10
-1
-0.1
0
Operation in
this area is
limited by R
Ta = 25 C
1 shot Pulse
Drain to Source Voltage
V
Pulse Test
Note 1:
When using the glass epoxy board.
( FR4 40 x 40 x 1.6 mm)
Gate to Source Voltage
Maximum Safe Operation Area
-0.3
DS
Typical Transfer Characteristics
-1
= -10 V
-1
DS(on)
75 C
-2
-3
-3
-10
25 C
Tc = -25 C
10 s
V
V
DS
-30
GS
-4
(V)
(V)
-100
-5