MT28F128J3FS-11ET Micron, MT28F128J3FS-11ET Datasheet

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MT28F128J3FS-11ET

Manufacturer Part Number
MT28F128J3FS-11ET
Description
32Mb Q-flash memory
Manufacturer
Micron
Datasheet
Q-FLASH
FEATURES
• x8/x16 organization
• One hundred twenty-eight 128KB erase blocks
• V
• Interface Asynchronous Page Mode Reads:
• Enhanced data protection feature with V
• Security OTP block feature
• Industry-standard pinout
• Inputs and outputs are fully TTL-compatible
• Common Flash Interface (CFI) and Scalable
• Automatic write and erase algorithm
• 4.7µs-per-byte effective programming time using
• 128-bit protection register
• 100,000 ERASE cycles per block
• Automatic suspend options:
NOTE: MT28F128J3, and MT28F320J3 are preliminary status.
OPTIONS
• Timing
• Operating Temperature Range
128Mb, 64Mb, 32Mb Q-Flash Memory
MT28F640J3_7.p65 – Rev. 6, Pub. 8/02
(128Mb)
Sixty-four 128KB erase blocks (64Mb)
Thirty-two 128KB erase blocks (32Mb)
Command Set
write buffer
150ns (128Mb)
120ns (64Mb)
110ns (32Mb)
Commercial Temperature (0ºC to +85ºC)
Extended Temperature (-40ºC to +85ºC)
CC
2.7V to 3.6V V
2.7V to 3.6V or 4.5V to 5.5V* V
2.7V to 3.6V, or 5V V
150ns/25ns read access time (128Mb)
120ns/25ns read access time (64Mb)
110ns/25ns read access time (32Mb)
Flexible sector locking
Sector erase/program lockout during power
Permanent block locking (Contact factory for
64-bit unique device identifier
64-bit user-programmable OTP cells
Block Erase Suspend-to-Read
Block Erase Suspend-to-Program
Program Suspend-to-Read
, V
MT28F640J3 is production status.
CC
transition
availability)
SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE
Q, and V
CC
PEN
operation
voltages:
TM
PEN
application programming
MEMORY
CC
Q operation
PRODUCTION DATA SHEET SPECIFICATIONS.
MARKING
PEN
None
= V
-15
-12
-11
ET
SS
1
MT28F128J3
MT28F320J3
• V
• Packages
*Contact factory for availability of the MT28F320J3 and
MT28F640J3.
2.7V–3.6V
4.5V–5.5V
56-pin TSOP Type I
64-ball FBGA (1.0mm pitch)
CC
Q Option*
MT28F640J3RG-12 ET
56-Pin TSOP Type I
128Mb, 64Mb, 32Mb
64-Ball FBGA
Part Number Example:
Q-FLASH MEMORY
, MT28F640J3,
©2002, Micron Technology, Inc.
None
RG
FS
F

Related parts for MT28F128J3FS-11ET

MT28F128J3FS-11ET Summary of contents

Page 1

... Extended Temperature (-40ºC to +85ºC) 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 ‡ PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S MT28F128J3 MT28F320J3 Q operation = V ...

Page 2

... Q-FLASH MEMORY , the standby mode is en RWH) is required after RP# t RS) from RP# HIGH until Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 3

... Due to the size of the package, Micron’s standard part number is not printed on the top of each device. Instead, an abbreviated device mark comprised of a Cross Reference for Abbreviated Device Marks PART NUMBER MT28F320J3FS-11 MT28F320J3FS-11 ET MT28F640J3FS-12 MT28F640J3FS-12 ET MT28F128J3FS-15 MT28F128J3FS-15 ET 56-Pin TSOP Type I 1 A22 2 CE1 3 A21 4 A20 ...

Page 4

... Buffer 128KB Memory Block (61) 128KB Memory Block (62) 128KB Memory Block (63 Select Gates Sense Amplifiers Write/Erase-Bit Compare and Verify Query Output Buffer Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. DQ0–DQ15 DQ0–DQ15 ...

Page 5

... Memory Block (2) Write Buffer 128KB Memory Block (29) 128KB Memory Block (30) 128KB Memory Block (31 Select Gates Sense Amplifiers Write/Erase-Bit Compare and Verify Query Output Buffer Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. DQ0–DQ15 ...

Page 6

... Q through a pull-up resistor. CC (continued on next page) 6 128Mb, 64Mb, 32Mb Q-FLASH MEMORY DESCRIPTION during all other modes IH is connected to PEN ≤ this pin enables hardware write PEN PENLK Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 7

... Pin 1 and ball A8 are NCs on the 32Mb device. Pin 30 and ball G1 are NCs on the 32Mb and 64Mb devices. DNU – Do Not Use: Must float to minimize noise. 7 128Mb, 64Mb, 32Mb Q-FLASH MEMORY DESCRIPTION Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 8

... connected to GND. ). Output pins DQ0–DQ15 are placed PLPH + PHRH, until the RESET operation is Micron Technology, Inc., reserves the right to change products or specifications without notice. DEVICE Enabled Disabled Disabled Disabled Enabled Enabled Enabled Disabled t PLPH. ©2002, Micron Technology, Inc. ...

Page 9

... NOTE: When obtaining these identifier codes not used in either x8 or x16 modes. Data is always given on the LOW byte in x16 mode (upper byte contains 00h). 9 Micron Technology, Inc., reserves the right to change products or specifications without notice. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Figure 2 ...

Page 10

... X D OUT OUT High-Z High PENH IN for V . See DC Characteristics for V PENH PEN Micron Technology, Inc., reserves the right to change products or specifications without notice. NOTES 10, 11 and PENLK = V and PEN PENH ©2002, Micron Technology, Inc. ...

Page 11

... WRITE PA or 10h 20h WRITE BA B0h D0h B8h WRITE X 60h WRITE BA 60h WRITE X C0h WRITE PA Micron Technology, Inc., reserves the right to change products or specifications without notice NOTES SRD 10 12, 13 D0h 11 01h D0h 15 PD ...

Page 12

... The CLEAR BLOCK LOCK BITS operation simultaneously clears all block lock bits. 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 128Mb, 64Mb, 32Mb Q-FLASH MEMORY will fail Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 13

... Q-FLASH MEMORY QUERY DATA WITH BYTE ADDRESSING ASCII HEX HEX VALUE OFFSET CODE Micron Technology, Inc., reserves the right to change products or specifications without notice. ASCII VALUE Q Null ©2002, Micron Technology, Inc. ...

Page 14

... Reserved for vendor-specific information Command set ID and vendor data offset Flash device layout Vendor-defined additional information specific to the primary vendor algorithm 14 Micron Technology, Inc., reserves the right to change products or specifications without notice. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY BYTE ADDRESSING HEX CODE VALUE DQ7– ...

Page 15

... MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 tionally, it indicates the specification version and sup- ported vendor-specified command set(s). Table 8 Block Status Register Table 9 CFI Identification 15 Micron Technology, Inc., reserves the right to change products or specifications without notice. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY 1 ADDRESS VALUE (BA+2 ...

Page 16

... Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. VALUE 2.7V 3.6V 0.0V 0.0V 128µs 128µs 1s N/A 2ms 2ms 16s N/A ...

Page 17

... Q-FLASH MEMORY CODE (see table below) 27h 28h 02 29h 00 2Ah 05 2Bh 00 2Ch 01 2Dh 2Eh 2Fh 30h 128Mb Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. x8/x16 32 1 ...

Page 18

... NOTE: 1. Future devices may not support the described “Legacy Lock/Unlock” function. On these devices, bit 3 would have a value of “0.” 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Table 12 ADDRESS 1 18 Micron Technology, Inc., reserves the right to change products or specifications without notice. HEX VALUE CODE 31h 50 P 32h 52 R ...

Page 19

... Hex value represents the number of 19 128Mb, 64Mb, 32Mb Q-FLASH MEMORY ADDRESS HEX 3Fh 01 40h 00 ADDRESS HEX 44h 03 45h 00 46h Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. VALUE CODE 01 00h VALUE CODE 8 byte ...

Page 20

... Identifier Codes CODE ADDRESS 00000h 00001h 00001h 00001h X0002h 20 128Mb, 64Mb, 32Mb Q-FLASH MEMORY or the device must IH 1 DATA (00) 89 (00) 16 (00) 17 (00 DQ0 = 0 DQ0 = 1 DQ1–DQ7 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 21

... READ IDENTIFIER CODES command to determine block lock bit status. SR0 is reserved for future use and should be masked when polling the status register. Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc ...

Page 22

... V . Note that SR3 and SR5 are PEN PENH t . LES defines the block erase OH . However, SR6 remains “1” to indicate OL Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ≤ PEN PENLK ...

Page 23

... SR4 and SR3 are set to PENLK are valid. Status register bits SR4 and SR3 PEN . The corresponding block lock bit should PENLK Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. and V CC PEN ...

Page 24

... LOW with a typical pulse width of 250ns. Check SR7 for device status. An invalid configuration code results in status register bits SR4 and SR5 being set to “1.” 24 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 25

... Q-FLASH MEMORY 1 DQ2 DQ1 PULSE ON PULSE ON PROGRAM 2 COMPLETE COMPLETE NOTES ≤ lock bit contents are protected PEN PENLK and V are valid CLEAR BLOCK CC PEN Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. DQ0 ERASE 2 ...

Page 26

... Words User-Programmed 85h 84h 4 Words Factory-Programmed 81h 1 Word Lock 80h 0 protection register map (see Table 19 for x16 addressing used for x8 mode (see Table 20 for x8 addressing). Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 27

... Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 28

... Full status check can be done after all erase and write sequences complete. Write FFh after the last operation to reset the device to read array mode. Issue READ STATUS Command 28 Micron Technology, Inc., reserves the right to change products or specifications without notice. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY COMMENTS WRITE-to- Data = E8h BUFFER ...

Page 29

... REGISTER command in cases where multiple locations are programmed before full status is checked error is detected, clear the status register before attempting retry or other error recovery. 29 Micron Technology, Inc., reserves the right to change products or specifications without notice. Programmed Programmed Programmed Voltage Error Detect ...

Page 30

... ISM Busy Check SR6 1 = Programming Suspended 0 = Programming Completed READ Data = FFh ARRAY Addr = X Read array locations other than that being programmed PROGRAM Data = D0h RESUME Addr = X Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 31

... Addr = Block Address ERASE Data = D0h CONFIRMED Addr = Block Address Status register data with the device enabled; OE# LOW updates SR Addr = X Check SR7 1 = ISM Ready 0 = ISM Busy Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 32

... Data = B0h SUSPEND Addr = X Status Register Data Addr = X Check SR7 1 = ISM Ready 0 = ISM Busy Check SR6 1 = Block Erase Suspended 0 = Block Erase Completed ERASE Data = D0h RESUME Addr = X Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 33

... Check SR7 1 = ISM Ready 0 = ISM Busy COMMENTS Check SR3 1 = Programming Voltage Error Detect Check SR4, SR5 Both 1 = Command Sequence Error Check SR4 1 = Set Block Lock Bits Error Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 34

... Check SR7 1 = ISM Ready 0 = ISM Busy COMMENTS Check SR3 1 = Programming Voltage Error Detect Check SR4, 5 Both 1 = Command Sequence Error Check SR5 1 = Clear Block Lock Bits Error Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 35

... Check SR7 1 = ISM Ready 0 = ISM Busy COMMENTS SR1 SR3 SR4 Protection Register Program Error Register Locked: Aborted Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. LOW PEN ...

Page 36

... Micron Q-Flash memory device. Addi- tionally, for every eight devices, a 4.7µF electrolytic capacitor should be placed between V the array’s power supply connection. 36 Micron Technology, Inc., reserves the right to change products or specifications without notice. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY pins (these CC ...

Page 37

... V , the CEL must be PEN PENLK transitions, V must be kept at or PEN PEN . when V is active. Because WE# LKO PEN or disabling the IH Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. must below PEN ...

Page 38

... DC voltage on input/output pins, V † +0.5V which, during transitions, may overshoot to V +2.0V for periods <20ns. †Output shorted for no more than one second. No more than one output shorted at a time. 38 Micron Technology, Inc., reserves the right to change products or specifications without notice. , and PEN CC CC ...

Page 39

... A MIN MAX UNITS 2.7 3.6 V 2.7 3.6 V 4.5 5.5 V ±1 µA ±10 µA -0 0.4 V 0.2 V 0. Micron Technology, Inc., reserves the right to change products or specifications without notice. NOTES ©2002, Micron Technology, Inc. ...

Page 40

... ≤ and they are not guaranteed in PEN PENLK (MAX). < and they are not guaranteed in CC LKO Micron Technology, Inc., reserves the right to change products or specifications without notice. MAX UNITS UNITS NOTES µ µ ...

Page 41

... LKO ≤ and they are not guaranteed in PEN PENLK (MAX). < and they are not guaranteed in CC LKO Micron Technology, Inc., reserves the right to change products or specifications without notice. UNITS NOTES ...

Page 42

... L Test Configuration Capacitance Loading Value Test Configuration 2. 4. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Q = 4.5V–5.5V V Q/2 Output CC Out C (pF Micron Technology, Inc., reserves the right to change products or specifications without notice ©2002, Micron Technology, Inc. ...

Page 43

... ALL 15 ns ALL 0 ns ALL 10 ns ALL 1,000 ns ALL 1,000 ns ALL 0 ns ALL 2.7V–3. 4.5V–5.5V, and CC CC Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. NOTES ...

Page 44

... APA VALID VALID VALID High-Z OUTPUT OUTPUT OUTPUT t ODB UNDEFINED V = 2.7V–3. 2.7V–3. 4.5V–5.5V MIN Micron Technology, Inc., reserves the right to change products or specifications without notice. MAX UNITS 180 ns 210 1,000 ns 1,000 © ...

Page 45

... CPH VPS STS 200 t VPH 200 Micron Technology, Inc., reserves the right to change products or specifications without notice. ≤ +85ºC) A UNITS NOTES µ ...

Page 46

... A -11/-12/-15 8 TYP MAX UNITS 150 654 14 630 0.6 1.7 0. 0.5 0.7 t LPS LES 26 35 Micron Technology, Inc., reserves the right to change products or specifications without notice. ≤ +85ºC) NOTES µ µs 4 sec 4 sec 4 µs 4 sec 5 µs µs ©2002, Micron Technology, Inc. ...

Page 47

... WB 47 128Mb, 64Mb, 32Mb Q-FLASH MEMORY 1 Note 6 Note 7 VALID VALID READY SRD VPH UNDEFINED -11/-12/-15 MIN Micron Technology, Inc., reserves the right to change products or specifications without notice. MAX UNITS 200 ns ns 200 ns ©2002, Micron Technology, Inc. ...

Page 48

... STS WEH 128Mb, 64Mb, 32Mb Q-FLASH MEMORY 1 Note Command Note 4 t STS UNDEFINED -11/-12/-15 MIN MAX 0 0 200 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. UNITS ns ns 200 ns ns ...

Page 49

... Extended Temperature (-40ºC ≤ SYMBOL t PLPH t PHRH 4 RESET OPERATION t PHRH t PLPH 49 128Mb, 64Mb, 32Mb Q-FLASH MEMORY ≤ +85ºC) A -11/-12/-15 MIN MAX UNITS 35 µs 100 ns Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. NOTES 2 3 ...

Page 50

... PLASTIC PACKAGE MATERIAL: EPOXY NOVOLAC LEAD FINISH: TIN/LEAD PLATE PACKAGE WIDTH AND LENGTH DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.25 PER SIDE 0.50 TYP 0.25 0.10 +0.10 0.10 -0.05 0.80 TYP DETAIL A Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 0.25 GAGE PLANE 0.5 ±0.10 ...

Page 51

... MT28F640J3 device. 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron, the Micron and M logos and Q-Flash are trademarks and/or servicemarks of Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 64-BALL FBGA 7 ...

Page 52

... Added 64-ball FBGA (1.0mm pitch) package Original document, Rev. 1 .................................................................................................................................................. 12/00 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/ APA WH), STS, and WB 52 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

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