MT28F128J3FS-11ET Micron, MT28F128J3FS-11ET Datasheet - Page 19

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MT28F128J3FS-11ET

Manufacturer Part Number
MT28F128J3FS-11ET
Description
32Mb Q-flash memory
Manufacturer
Micron
Datasheet
NOTE: 1. The variable “P” is a pointer which is defined at CFI offset 15h.
128Mb, 64Mb, 32Mb Q-Flash Memory
MT28F640J3_7.p65 – Rev. 6, Pub. 8/02
OFFSET
OFFSET
P = 31h
P = 31h
(P+10)h
(P+11)h
(P+12)h
(P+13)h
(P+14)h
(P+15)h
(P+E)h
(P+F)h
1
1
DESCRIPTION
(OPTIONAL FLASH FEATURES AND COMMANDS)
Number of protection register fields in JEDEC ID space. “00h”
indicates that 256 protection bytes are available.
Protection Field 1: Protection Description
This field describes user-available, one-time programmable (OTP)
protection register bytes. Some are preprogrammed with device-
unique serial numbers; others are user-programmable. Bits 0–15
point to the protection register lock byte, the section’s first byte.
The following bytes are factory-preprogrammed and user-
programmable.
Bits 0–7 Lock/bytes JEDEC-plane physical low address
Bits 8–15 Lock/bytes JEDEC-plane physical high address
Bits 16–23 “n” such that 2
Bits 24–31 “n” such that 2
DESCRIPTION
(OPTIONAL FLASH FEATURES AND COMMANDS)
Page Mode Read Capability
Bits 0–7 = “n” such that 2
read page bytes. See offset 28h for device word width to determine
page mode data output width. 00h indicates no read page buffer.
Number of synchronous mode read configuration fields
that follow. 00h indicates no burst capability.
Reserved for future use.
Protection Register Information
n
n
n
Hex value represents the number of
= factory preprogrammed bytes
= user-programmable bytes
Burst Read Information
Table 13
Table 14
19
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mb, 64Mb, 32Mb
Q-FLASH MEMORY
ADDRESS
ADDRESS
3Fh
40h
44h
45h
46h
HEX
HEX
01
00
03
00
©2002, Micron Technology, Inc.
VALUE
VALUE
CODE
CODE
8 byte
00h
01

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