MT28F128J3FS-15F Micron, MT28F128J3FS-15F Datasheet

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MT28F128J3FS-15F

Manufacturer Part Number
MT28F128J3FS-15F
Description
128Mb Q-FLASH MEMORY
Manufacturer
Micron
Datasheet
Q-FLASH
FEATURES
• x8/x16 organization
• One hundred twenty-eight 128KB erase blocks (128Mb)
• V
• Interface Asynchronous Page Mode Reads:
• Enhanced data protection feature with V
• Security OTP block feature
• Industry-standard pinout
• Inputs and outputs are fully TTL-compatible
• Common Flash Interface (CFI) and Scalable
• Automatic write and erase algorithm
• 4.7µs-per-byte effective programming time using
• 128-bit protection register
• 100,000 ERASE cycles per block
• Automatic suspend options:
OPTIONS
• Timing
• Operating Temperature Range
• V
• Packages
128Mb, 64Mb, 32Mb Q-Flash Memory
MT28F640J3_6.p65 – Rev. 5, Pub. 6/02
Sixty-four 128KB erase blocks (64Mb)
Thirty-two 128KB erase blocks (32Mb)
Command Set
write buffer
150ns (128Mb)
120ns (64Mb)
110ns (32Mb)
Extended Temperature (-40ºC to +85ºC)
2.7V–3.6V
4.5V–5.5V
56-pin TSOP Type I
64-ball FBGA (1.0mm pitch)
CC
CC
2.7V to 3.6V V
2.7V to 3.6V or 4.5V to 5.5V* V
2.7V to 3.6V, or 5V V
150ns/25ns read access time (128Mb)
120ns/25ns read access time (64Mb)
110ns/25ns read access time (32Mb)
Flexible sector locking
Sector erase/program lockout during power transition
Permanent block locking (MT28F320J3 only)
64-bit unique device identifier
64-bit user-programmable OTP cells
Block Erase Suspend-to-Read
Block Erase Suspend-to-Program
Program Suspend-to-Read
Q Option*
, V
CC
SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE
Q, and V
CC
PEN
operation
voltages:
TM
PEN
application programming
MEMORY
CC
Q operation
PRODUCTION DATA SHEET SPECIFICATIONS.
MARKING
PEN
None
None
= V
-15
-12
-11
RG
FS
F
SS
1
MT28F128J3, MT28F640J3,
MT28F320J3
*Contact factory for availability of the MT28F320J3 and
MT28F640J3.
NOTE: 1. A22 only exists on the 64Mb and 128Mb devices.
PIN /BALL ASSIGNMENT (Top View)
2. A23 only exists on the 128Mb device. On the
3. The # symbol indicates signal is active LOW.
A
B
C
D
E
G
H
F
On the 32Mb, this pin/ball is a no connect (NC).
32Mb and 64Mb, this pin/ball is a no connect
(NC).
V
A22
CE1
A21
A20
A19
A18
A17
A16
A15
A14
A13
A12
CE0
RP#
A11
A10
V
PEN
V
A9
A8
A7
A6
A5
A4
A3
A2
A1
CC
SS
BYTE#
DQ8
A23
CE2
A1
A2
A3
A4
1
56-Pin TSOP Type I
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
DQ1
DQ0
DNU
A6
V
A7
A5
A0
2
SS
128Mb, 64Mb, 32Mb
64-Ball FBGA
DQ10
DQ9
DQ2
A10
A11
V
3
A8
A9
CC
Q-FLASH MEMORY
(Ball Down)
DQ11
V
V
DQ3
CE0
A12
RP#
V
Top View
CC
4
PEN
SS
Q
DQ12
DQ13
DNU
DQ4
DQ5
A13
A14
A15
5
DNU
DNU
DNU
DNU
DNU
DQ6
V
V
6
CC
SS
PRELIMINARY
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
DQ15
DQ14
DNU
DQ7
A18
A19
A20
A16
7
©2002, Micron Technology, Inc.
NC
WE#
OE#
STS
DQ15
DQ7
DQ14
DQ6
V
DQ13
DQ5
DQ12
DQ4
V
V
DQ11
DQ3
DQ10
DQ2
V
DQ9
DQ1
DQ8
DQ0
A0
BYTE#
A23
CE2
WE#
A22
CE1
A21
A17
OE#
STS
NC
8
SS
CC
SS
CC
Q

Related parts for MT28F128J3FS-15F

MT28F128J3FS-15F Summary of contents

Page 1

... Q-Flash Memory MT28F640J3_6.p65 – Rev. 5, Pub. 6/02 ‡ PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S MT28F128J3, MT28F640J3, MT28F320J3 PIN /BALL ASSIGNMENT (Top View) ...

Page 2

... Q-FLASH MEMORY serves as an input with 2.7V, 3.3V for in this Q-Flash PEN , the standby mode is en RWH) is required after RP# t RS) from RP# HIGH until Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. family ...

Page 3

... Buffer 128KB Memory Block (61) 128KB Memory Block (62) 128KB Memory Block (63 Select Gates Sense Amplifiers Write/Erase-Bit Compare and Verify Query Output Buffer Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. DQ0–DQ15 DQ0–DQ15 ...

Page 4

... Memory Block (2) Write Buffer 128KB Memory Block (29) 128KB Memory Block (30) 128KB Memory Block (31 Select Gates Sense Amplifiers Write/Erase-Bit Compare and Verify Query Output Buffer Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. DQ0–DQ15 ...

Page 5

... Q through a pull-up resistor. CC (continued on next page) 5 PRELIMINARY 128Mb, 64Mb, 32Mb Q-FLASH MEMORY DESCRIPTION during all other modes IH is connected to PEN V , this pin enables hardware write PEN PENLK Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 6

... Pin 1 and ball A8 are NCs on the 32Mb device. Pin 30 and ball G1 are NCs on the 32Mb and 64Mb devices. DNU – Do Not Use: Must float to minimize noise. 6 PRELIMINARY 128Mb, 64Mb, 32Mb Q-FLASH MEMORY DESCRIPTION Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 7

... connected to GND. ). Output pins DQ0–DQ15 are placed PLPH + PHRH, until the RESET operation is Micron Technology, Inc., reserves the right to change products or specifications without notice. DEVICE Enabled Disabled Disabled Disabled Enabled Enabled Enabled Disabled t PLPH. ©2002, Micron Technology, Inc. ...

Page 8

... NOTE: When obtaining these identifier codes not used in either x8 or x16 modes. Data is always given on the LOW byte in x16 mode (upper byte contains 00h). 8 Micron Technology, Inc., reserves the right to change products or specifications without notice. PRELIMINARY 128Mb, 64Mb, 32Mb Q-FLASH MEMORY ...

Page 9

... X D OUT OUT High-Z High PENH IN for V . See DC Characteristics for V PENH PEN Micron Technology, Inc., reserves the right to change products or specifications without notice. NOTES 10, 11 and PENLK = V and PEN PENH ©2002, Micron Technology, Inc. ...

Page 10

... WRITE BA B0h D0h B8h WRITE X 60h WRITE BA 60h WRITE X C0h WRITE PA C0h WRITE 8Ch Micron Technology, Inc., reserves the right to change products or specifications without notice NOTES SRD 10 12, 13 D0h 11 01h D0h 15 PD ...

Page 11

... The value of DQ4–DQ0 details the block, or blocks, that are security block locked. See Table 18 for details (MT28F320J3 only). 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_6.p65 – Rev. 5, Pub. 6/02 128Mb, 64Mb, 32Mb Q-FLASH MEMORY will fail Micron Technology, Inc., reserves the right to change products or specifications without notice. PRELIMINARY ©2002, Micron Technology, Inc. ...

Page 12

... Q-FLASH MEMORY QUERY DATA WITH BYTE ADDRESSING ASCII HEX HEX VALUE OFFSET CODE Micron Technology, Inc., reserves the right to change products or specifications without notice. ASCII VALUE Q Null ©2002, Micron Technology, Inc. ...

Page 13

... Reserved for vendor-specific information Command set ID and vendor data offset Flash device layout Vendor-defined additional information specific to the primary vendor algorithm 13 Micron Technology, Inc., reserves the right to change products or specifications without notice. PRELIMINARY 128Mb, 64Mb, 32Mb Q-FLASH MEMORY BYTE ADDRESSING HEX CODE VALUE DQ7– ...

Page 14

... MT28F640J3_6.p65 – Rev. 5, Pub. 6/02 tionally, it indicates the specification version and sup- ported vendor-specified command set(s). Table 7 Block Status Register Table 8 CFI Identification 14 Micron Technology, Inc., reserves the right to change products or specifications without notice. PRELIMINARY 128Mb, 64Mb, 32Mb Q-FLASH MEMORY 1 ADDRESS VALUE (BA+2)h ...

Page 15

... Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. VALUE 2.7V 3.6V 0.0V 0.0V 128µs 128µs 1s N/A 2ms 2ms 16s N/A ...

Page 16

... Q-FLASH MEMORY CODE (see table below) 27h 28h 02 29h 00 2Ah 05 2Bh 00 2Ch 01 2Dh 2Eh 2Fh 30h 128Mb Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. x8/x16 32 1 ...

Page 17

... NOTE: 1. Future devices may not support the described “Legacy Lock/Unlock” function. On these devices, bit 3 would have a value of “0.” 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_6.p65 – Rev. 5, Pub. 6/02 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Table 11 ADDRESS 1 17 Micron Technology, Inc., reserves the right to change products or specifications without notice. PRELIMINARY HEX VALUE CODE 31h 50 P 32h 52 ...

Page 18

... Hex value represents the number of 18 PRELIMINARY 128Mb, 64Mb, 32Mb Q-FLASH MEMORY ADDRESS HEX 3Fh 01 40h 00 ADDRESS HEX 44h 03 45h 00 46h Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. VALUE CODE 01 00h VALUE CODE 8 byte ...

Page 19

... CODE ADDRESS 00000h 00001h 00001h 00001h X0002h 19 PRELIMINARY 128Mb, 64Mb, 32Mb Q-FLASH MEMORY or the device must IH 1 DATA (00) 89 (00) 16 (00) 17 (00 DQ0 = 0 DQ0 = 1 DQ1–DQ7 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 20

... READ IDENTIFIER CODES command to determine block lock bit status. SR0 is reserved for future use and should be masked when polling the status register. Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc ...

Page 21

... V . Note that SR3 and SR5 are PEN PENH t . LES defines the block erase OH . However, SR6 remains “1” to indicate OL Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc PEN PENLK ...

Page 22

... SR4 and SR3 are set to PENLK are valid. Status register bits SR4 and SR3 PEN V . The corresponding block lock bit should PENLK Micron Technology, Inc., reserves the right to change products or specifications without notice. and V CC PEN ©2002, Micron Technology, Inc. ...

Page 23

... LOW with a typical pulse width of 250ns. Check SR7 for device status. An invalid configuration code results in status register bits SR4 and SR5 being set to “1.” 23 PRELIMINARY 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 24

... PRELIMINARY 128Mb, 64Mb, 32Mb Q-FLASH MEMORY PULSE ON ERASE 1 1 COMPLETE BIT 0 and lock bit contents are protected PEN PENLK Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. are PEN ...

Page 25

... Q-FLASH MEMORY lock bit contents are pro- PEN PENLK FUNCTION Locks block 0 Locks block 1 Locks block 30 Locks block 31 Locks all 32 blocks Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. and V are PEN ...

Page 26

... NOTE not used in x16 mode when accessing the protection register map (see Table 19 for x16 addressing used for x8 mode (see Table 20 for x8 addressing). 26 Micron Technology, Inc., reserves the right to change products or specifications without notice. PRELIMINARY 0 ©2002, Micron Technology, Inc. ...

Page 27

... Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 28

... Full status check can be done after all erase and write sequences complete. Write FFh after the last operation to reset the device to read array mode. Issue READ STATUS Command 28 Micron Technology, Inc., reserves the right to change products or specifications without notice. PRELIMINARY 128Mb, 64Mb, 32Mb Q-FLASH MEMORY COMMENTS WRITE-to- Data = E8h ...

Page 29

... REGISTER command in cases where multiple locations are programmed before full status is checked error is detected, clear the status register before attempting retry or other error recovery. 29 Micron Technology, Inc., reserves the right to change products or specifications without notice. PRELIMINARY Programmed Programmed Programmed Voltage Error Detect ...

Page 30

... ISM Busy Check SR6 1 = Programming Suspended 0 = Programming Completed READ Data = FFh ARRAY Addr = X Read array locations other than that being programmed PROGRAM Data = D0h RESUME Addr = X Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 31

... Full status check can be done after all erase and write sequences complete. Write FFh after the last operation to reset the device to read array mode. 31 Micron Technology, Inc., reserves the right to change products or specifications without notice. PRELIMINARY 128Mb, 64Mb, 32Mb Q-FLASH MEMORY ...

Page 32

... Data = B0h SUSPEND Addr = X Status Register Data Addr = X Check SR7 1 = ISM Ready 0 = ISM Busy Check SR6 1 = Block Erase Suspended 0 = Block Erase Completed ERASE Data = D0h RESUME Addr = X Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 33

... Check SR7 1 = ISM Ready 0 = ISM Busy COMMENTS Check SR3 1 = Programming Voltage Error Detect Check SR4, SR5 Both 1 = Command Sequence Error Check SR4 1 = Set Block Lock Bits Error Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 34

... Check SR7 1 = ISM Ready 0 = ISM Busy COMMENTS Check SR3 1 = Programming Voltage Error Detect Check SR4, 5 Both 1 = Command Sequence Error Check SR5 1 = Clear Block Lock Bits Error Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 35

... Check SR7 1 = ISM Ready 0 = ISM Busy COMMENTS SR1 SR3 SR4 Protection Register Program Error Register Locked: Aborted Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. LOW PEN ...

Page 36

... Micron Q-Flash memory device. Addi- tionally, for every eight devices, a 4.7µF electrolytic capacitor should be placed between V the array’s power supply connection. 36 Micron Technology, Inc., reserves the right to change products or specifications without notice. PRELIMINARY 128Mb, 64Mb, 32Mb Q-FLASH MEMORY pins (these ...

Page 37

... V , the CEL must be PEN PENLK transitions, V must be kept at or PEN PEN . when V is active. Because WE# LKO PEN or disabling the IH Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. must below PEN ...

Page 38

... DC voltage on input/output pins, V † +0.5V which, during transitions, may overshoot to V +2.0V for periods <20ns. †Output shorted for no more than one second. No more than one output shorted at a time. 38 Micron Technology, Inc., reserves the right to change products or specifications without notice. PRELIMINARY , and PEN CC CC © ...

Page 39

... Q-FLASH MEMORY MIN MAX UNITS 2.7 3.6 V 3.0 3.6 V 2.7 3.6 V 3.0 3.6 V 4.5 5.5 V ±1 µA ±10 µA -0 0.4 V 0.2 V 0. Micron Technology, Inc., reserves the right to change products or specifications without notice. NOTES ©2002, Micron Technology, Inc. ...

Page 40

... and they are not guaranteed in PEN PENLK (MAX). < and they are not guaranteed in CC LKO Micron Technology, Inc., reserves the right to change products or specifications without notice. MAX UNITS UNITS NOTES µ µ ...

Page 41

... LKO and they are not guaranteed in PEN PENLK (MAX). < and they are not guaranteed in CC LKO Micron Technology, Inc., reserves the right to change products or specifications without notice. UNITS NOTES ...

Page 42

... Test Configuration Capacitance Loading Value Test Configuration 3. 2. 4. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Q = 3.0V–3.6V 4.5V–5.5V V Q/2 Output CC Out C (pF Micron Technology, Inc., reserves the right to change products or specifications without notice. PRELIMINARY Q/ CC ©2002, Micron Technology, Inc. ...

Page 43

... Q = 3.0V–3.6V 2.7V–3.6V Micron Technology, Inc., reserves the right to change products or specifications without notice. NOTES ...

Page 44

... 2.7V–3. 4.5V–5.5V MIN MAX MIN 180 210 1,000 1,000 Micron Technology, Inc., reserves the right to change products or specifications without notice. MAX UNITS 180 ns 210 1,000 ns 1,000 ©2002, Micron Technology, Inc. ...

Page 45

... WH CPH VPS STS 90 t VPH Micron Technology, Inc., reserves the right to change products or specifications without notice. PRELIMINARY UNITS NOTES µ ...

Page 46

... Q-FLASH MEMORY -11/-12/-15 8 MIN MAX UNITS 150 654 11 630 0.6 1.7 0. 0.5 0.7 t LPS LES 26 35 Micron Technology, Inc., reserves the right to change products or specifications without notice. NOTES µ µs 4 sec 4 sec 4 µs 4 sec 5 µs µs ©2002, Micron Technology, Inc. ...

Page 47

... WB 47 PRELIMINARY 128Mb, 64Mb, 32Mb Q-FLASH MEMORY 1 Note 6 Note 7 VALID VALID READY SRD VPH UNDEFINED -11/-12/-15 MIN Micron Technology, Inc., reserves the right to change products or specifications without notice. MAX UNITS ©2002, Micron Technology, Inc. ...

Page 48

... Q-Flash Memory MT28F640J3_6.p65 – Rev. 5, Pub. 6/02 T +85ºC) A SYMBOL t PLPH t PHRH 4 RESET OPERATION t PHRH t PLPH 48 PRELIMINARY 128Mb, 64Mb, 32Mb Q-FLASH MEMORY -11/-12/-15 MIN MAX UNITS 35 µs 100 ns Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. NOTES 2 3 ...

Page 49

... PLASTIC PACKAGE MATERIAL: EPOXY NOVOLAC LEAD FINISH: TIN/LEAD PLATE PACKAGE WIDTH AND LENGTH DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.25 PER SIDE 0.50 TYP 0.25 0.10 +0.10 0.10 -0.05 0.80 TYP DETAIL A Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 0.25 GAGE PLANE 0.5 ±0.10 ...

Page 50

... S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron and the M logo are registered trademarks, and the Micron logo and Q-Flash are trademarks of Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_6.p65 – Rev. 5, Pub. 6/02 64-BALL FBGA 7 ...

Page 51

... Added 128Mb device information • Added 64-ball FBGA (1.0mm pitch) package Original document, Rev. 1 .................................................................................................................................................. 12/00 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_6.p65 – Rev. 5, Pub. 6/02 128Mb, 64Mb, 32Mb Q-FLASH MEMORY 51 Micron Technology, Inc., reserves the right to change products or specifications without notice. PRELIMINARY ©2002, Micron Technology, Inc. ...

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