MT29F16G08FAAWC Micron, MT29F16G08FAAWC Datasheet - Page 24
MT29F16G08FAAWC
Manufacturer Part Number
MT29F16G08FAAWC
Description
NAND Flash Memory; Density: 16Gb; Organization: 2Gbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to +70°C; Package: 48-TSOP
Manufacturer
Micron
Datasheet
1.MT29F16G08FAAWC.pdf
(81 pages)
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READ ID 90h
Figure 15:
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
WE#
I/Ox
ALE
CE#
RE#
CLE
READ ID Operation
90h
Notes:
Address, 1 cycle
The READ ID command is used to read the 5 bytes of identifier code programmed into
the NAND Flash devices. The READ ID command reads a 5-byte table that includes
manufacturer ID, device configuration, and part-specific information (see Table 8 on
page 25).
Writing 90h to the command register puts the device into the read ID mode. The
command register stays in this mode until the next command cycle is issued (see
Figure 15).
1. See Table 8 on page 25 for byte definitions.
00h
t WHR
t AR
t REA
Byte 0
24
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
Byte 1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Byte 2
Byte 3
Command Definitions
©2006 Micron Technology, Inc. All rights reserved.
Byte 4
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