MT29F16G08FAAWC Micron, MT29F16G08FAAWC Datasheet - Page 50

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MT29F16G08FAAWC

Manufacturer Part Number
MT29F16G08FAAWC
Description
NAND Flash Memory; Density: 16Gb; Organization: 2Gbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to +70°C; Package: 48-TSOP
Manufacturer
Micron
Datasheet

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Figure 39:
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
I/Ox
R/B#
(die 1 internal)
R/B#
(die 2 internal)
R/B#
(external)
I/Ox
R/B#
(die 1 internal)
R/B#
(die 2 internal)
R/B#
(external)
1
80h
Interleaved TWO-PLANE PROGRAM PAGE Operation with R/B# Monitoring
Address
Die 1
Notes:
Data
1. Two-plane addressing requirements apply.
11h
80h
Address
Die 1
Data
10h
50
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
80h
80h
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Address
Address
Die 2
Die 1
Data
Data
11h
11h
Command Definitions
80h
80h
©2006 Micron Technology, Inc. All rights reserved.
Address
Address
Die 2
Die 1
Data
Data
10h
1

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