3SK194 Hitachi Semiconductor, 3SK194 Datasheet - Page 3

• Manufacturer Part Number: 3SK194
• Description: Silicon N-Channel Dual Gate MOS FET
• Manufacturer: Hitachi Semiconductor

Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate 1 to source breakdown
voltage
Gate 2 to source breakdown
voltage
Gate 1 cutoff current
Gate 2 cutoff current
Gate 1 to source cutoff voltage V
Gate 2 to source cutoff voltage V
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Noise figure
Power gain
Noise figure
Note: Marking is “IY–”.
Symbol
V
V
V
I
I
I
|y
Ciss
Coss
Crss
PG
NF
NF
PG
NF
G1SS
G2SS
DSS
(BR)DSX
(BR)G1SS
(BR)G2SS
G1S(off)
G2S(off)
fs
|
Min
15
—
—
—
—
0
17
—
—
—
12
—
—
27
—
10
10
Typ
—
—
—
—
—
—
—
—
—
2.8
1.8
0.02
15
3.0
3.0
30
1.0
Max
—
—
—
–1.0
–1.5
10
—
3.5
2.5
—
—
4.5
4.0
—
2.5
100
100
Unit
V
V
V
nA
nA
V
V
mA
mS
pF
pF
pF
dB
dB
dB
dB
dB
Test conditions
I
V
I
I
V
V
V
I
V
I
V
V
I
V
I
V
I
V
f = 60 MHz
V
I
D
G1
G2
D
D
D
D
D
D
G1S
G1S
G2S
DS
DS
DS
DS
DS
DS
DD
DS
= 200 A,
= 100 A
= 100 A
= 10 mA, f = 1 kHz
= 10 mA, f = 1 MHz
= 10 mA, f = 900 MHz
= 10 mA, f = 200 MHz
= 10 A, V
= 10 A, V
= 10 V, V
= 10 V, V
= 6 V, V
= 6 V, V
= 6 V, V
= 6 V, V
= 6 V, V
= 12 V, V
= V
= 8 V, V
= 8 V, V
G2S
= –5 V
G1S
G2S
G2S
G2S
G2S
G2S
G1S
AGC
G2S
G1S
= 0, V
= 3 V,
= 3 V,
= 3 V,
= 3 V,
G2S
G1S
= 3 V,
= 3 V,
= 10.5 V,
= V
= V
3SK194
= V
= V
DS
DS
G2S
DS
DS
= 0
= 0
= 0
= 0
= 3 V
3