3SK194 Hitachi Semiconductor, 3SK194 Datasheet - Page 4

• Manufacturer Part Number: 3SK194
• Description: Silicon N-Channel Dual Gate MOS FET
• Manufacturer: Hitachi Semiconductor

3SK194
4
300
200
100
20
16
12
8
4
0
0
–1
Gate 1 to Source Voltage V
Ambient Temperature Ta ( C)
Drain Current vs. Gate 1 to
0
Maximum Channel Power
Source Voltage
Dissipation Curve
2
50
V
1.5
1
G2S
1
0.5
= 0 V
2
100
V
G1S
DS
3
= 6 V
(V)
150
4
20
16
12
20
16
12
8
4
0
8
4
0
–1
Gate 2 to Source Voltage V
Drain to Source Voltage V
Typical Output Characteristics
0.8
Drain Current vs. Gate 2 to
2
0
Source Voltage
1.5
4
V
1
G1S
V
0.6
0.4
0.2
1
G1S
= 0
0.5
6
= 0 V
2
V
V
G2S
DS
G2S
DS
8
3
(V)
= 6 V
= 3 V
(V)
10
4