3SK296 Hitachi Semiconductor, 3SK296 Datasheet
3SK296
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3SK296 Summary of contents
Page 1
... Silicon N-Channel Dual Gate MOS FET Application UHF RF amplifier Features Low noise figure 2.0 dB Typ 900 MHz Capable of low voltage operation Outline CMPAK–4 3SK296 Source 4 2. Gate1 3. Gate2 4. Drain ADE-208-388 1st. Edition ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Attention: This device is very sensitive to electro static discharge recommended to adopt appropriate cautions when handling this transistor. ...
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... G2S 150 200 Drain to source voltage Drain Current vs. Gate2 to Source Voltage Gate2 to source voltage V (V) 3SK296 Pulse test 1.2 V 1.0 V 0 0.4 V G1S ( 1.5 V Pulse test 1 0.5 V G1S ...
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... Forward Transfer Admittance vs. Gate1 to Source Voltage kHz 1 0.4 0.8 Gate1 to source voltage V Noise Figure vs. Drain Current Drain current 3.0 V G2S 15 2 2 2.0 1.2 1.6 (V) G1S G2S ...
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... Noise Figure vs. Drain to Source Voltage G2S 900 MHz Drain to source voltage V DS 3SK296 = (V) 5 ...
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... S11 Parameter vs. Frequency 1.0 1 –.2 –.4 –.6 –1.5 –.8 –1 Condition 100 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90 120 150 180 –150 –120 –90 Condition ...
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... S22 ANG. MAG. ANG. 79.2 0.989 –4.2 80.4 0.987 –6.1 79.5 0.986 –7.9 79.9 0.984 –9.8 75.2 0.981 –11.5 71.8 0.978 –13.4 70.7 0.975 –15.2 65.5 0.972 –17.2 62 ...
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Hitachi Code JEDEC EIAJ Weight (reference ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...