3SK296 Hitachi Semiconductor, 3SK296 Datasheet - Page 6

• Manufacturer Part Number: 3SK296
• Description: Silicon N-Channel Dual Gate MOS FET
• Manufacturer: Hitachi Semiconductor

3SK296
6
0
–.2
.2
180
–150
150
–.4
.4
S11 Parameter vs. Frequency
Condition:
100 to 1000 MHz (50 MHz step)
.2
S12 Parameter vs. Frequency
–.6
.6
Condition:
100 to 1000 MHz (50 MHz step)
–120
120
.4
–.8
.8
.6 .8
V
I
D
DS
–1
= 10 mA , Zo = 50
1
1.0
V
I
= 4 V , V
D
DS
–90
90
= 10 mA , Zo = 50
1.5
= 4 V , V
–1.5
2
1.5
G2S
3 4 5
Scale: 0.002/ div.
–2
G2S
= 3 V
–60
2
60
3
10
–3
= 3 V
4
–4
5
–5
10
–10
–30
30
0
180
0
–.2
.2
–150
150
–.4
.4
S22 Parameter vs. Frequency
Condition:
100 to 1000 MHz (50 MHz step)
S21 Parameter vs. Frequency
.2
Condition:
100 to 1000 MHz (50 MHz step)
–120
–.6
120
.6
.4
–.8
.8
.6 .8
V
I
D
DS
V
I
–1
= 10 mA , Zo = 50
D
1
DS
–90
1.0
= 4 V , V
90
= 10 mA , Zo = 50
= 4 V , V
1.5
–1.5
2
1.5
Scale: 0.5 / div.
G2S
3 4 5
G2S
–60
60
–2
= 3 V
2
= 3 V
3
10
–3
4
–4
5
–5
–30
30
10
–10
0