3SK321 Hitachi Semiconductor, 3SK321 Datasheet
3SK321
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3SK321 Summary of contents
Page 1
... Silicon N-Channel Dual Gate MOS FET Application UHF RF amplifier Features Low noise figure 2.0 dB typ 900 MHz Capable of low voltage operation Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline 3SK321 MPAK- ADE-208-711A (Z) 2nd. Edition 1. Source 2. Drain 3. Gate2 4. Gate1 ...
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... Absolute Maximum Ratings ( Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Attention: This device is very sensitive to electro static discharge recommended to adopt appropriate cautions when handling this transistor. ...
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... Disk Capacitor（1000pF) C3 ： Air Capacitor（1000pF) R1 ： 47 kΩ R2 ： 47 kΩ ： 4.7 kΩ R3 L2： L4： RFC：φ1mm Copper wire with enamel 4turns inside dia 6mm RFC Output （φ1mm Copper wire） Unit：mm 18 3SK321 3 ...
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... Maximum Channel Power Dissipation Curve 200 150 100 100 Ambient Temperature Drain Current vs. Gate1 to Source Voltage 20 3.0 V 2 0.5 V G2S Gate1 to source voltage 150 200 Drain Current vs. Gate2 to Source Voltage ...
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... Power Gain vs. Drain Current 2.0 1.6 1 (V) G1S Power Gain vs. Drain to Source Voltage Drain to source voltage 3SK321 G2S f = 900 MHz Drain current I (mA G2S 900 MHz ...
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... Noise Figure vs. Drain to Source Voltage G2S 900 MHz Drain to source voltage = (V) DS ...
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... MHz (50 MHz step) S22 Parameter vs. Frequency 1.0 1 –2 –.6 –1.5 –.8 –1 Condition G2S 100 to 1000 MHz (50 MHz step) 3SK321 30 0 – –10 –5 –4 –3 7 ...
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... S Parameter ( Freq. S11 (MHz) MAG. ANG. 100 0.999 –6.1 150 0.998 –9.1 200 0.992 –11.9 250 0.988 –14.8 300 0.985 –17.9 350 0.976 –20.6 400 0.971 –23.2 450 0.964 –26.3 500 0.961 –29.1 550 0.951 –32.2 600 0.949 – ...
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... Package Dimensions 2.95 ±0.2 1.9 ±0.2 0.95 0.95 + 0.1 0.4 – 0. 0.1 0.6 – 0.05 0.85 0.95 1.8 + 0.1 0.4 – 0.05 + 0.1 0.4 – 0.05 + 0.1 0.16 – 0. 0.1 Hitachi Code MPAK–4R EIAJ — — JEDEC 3SK321 Unit ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...